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  qgd Datasheet PDF File

For qgd Found Datasheets File :: 20552    Search Time::1.407ms    
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    IRF6609 IRF660B9 IRF6618TR1 IRF6618

IRF[International Rectifier]
Part No. IRF6609 IRF660B9 IRF6618TR1 IRF6618
OCR Text ...)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage ...
Description Power MOSFET

File Size 228.02K  /  10 Page

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    NTHS5441 NTHS5441T1G NTHS5441T1

ONSEMI[ON Semiconductor]
Part No. NTHS5441 NTHS5441T1G NTHS5441T1
OCR Text ...in Reverse Recovery Time QG QGS qgd Ciss Coss Crss td(on) tr td(off) tf trr IF = -1.1 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W ID ^ -1.0 A, VGEN = -4.5 V, RG = 6 W VDS = -5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz VDS = -10 V, VGS = -4.5 V, ID = -...
Description −20 V, −5.3 A, P−Channel ChipFET

File Size 63.30K  /  6 Page

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    SSM4532M

List of Unclassifed Manufacturers
ETC[ETC]
Silicon Standard Corp.
Part No. SSM4532M
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55oC) o VDS=VGS, ID=250uA VDS=10V, ID=5A...
Description COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

File Size 186.32K  /  11 Page

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    PH6325L

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PH6325L
OCR Text ...k reference data s VDS 25 V s qgd = 3.3 nC (typ) s RDSon 6.3 m (VGS = 10 V) s ID 78.7 A s Qg(tot) = 13.3 nC (typ) s RDSon 9.5 m (VGS = 4.5 V). 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outl...
Description N-channel TrenchMOS logic level FET 78.7 A, 25 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
From old datasheet system

File Size 127.93K  /  13 Page

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    IRL8113 IRL8113L IRL8113S

IRF[International Rectifier]
Part No. IRL8113 IRL8113L IRL8113S
OCR Text ...)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 302.23K  /  12 Page

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    AP4563GH

Advanced Power Electronics Corp.
Part No. AP4563GH
OCR Text ...N) VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance 2 VGS=10V, ID=20A VGS=4.5V, ID=15A VDS=VGS, ID=250uA VDS=10V, ID=20A Gate Threshold Voltage Forward Transconductance Drai...
Description 30V N-Channel PowerTrench MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 81.29K  /  7 Page

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    AP4563GM

Advanced Power Electronics Corp.
Part No. AP4563GM
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID...
Description 30V N-Channel PowerTrench MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 81.17K  /  7 Page

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    KA5Q1565RFYDTU

Fairchild Semiconductor
Part No. KA5Q1565RFYDTU
OCR Text ....3 - gate-drain (miller) charge qgd - 29.3 - ka5q12656rt/ka5q1265rf drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max., rating, v gs =0v - - 200 a v ds =0.8max., rating, v ...
Description 15A/650V QRC Power Switch

File Size 191.20K  /  16 Page

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    AP4565GM

Advanced Power Electronics Corp.
Part No. AP4565GM
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=7A...
Description 30V N-Channel PowerTrench MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 95.18K  /  7 Page

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    AP4565M

Advanced Power Electronics Corp.
Part No. AP4565M
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 94.43K  /  7 Page

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For qgd Found Datasheets File :: 20552    Search Time::1.407ms    
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