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  OTC2470-120H Datasheet PDF File

For OTC2470-120H Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    IGP03N120H208 IGW03N120H2

Infineon Technologies AG
Infineon Technologies A...
Part No. IGP03N120H208 IGW03N120H2
Description HighSpeed 2-Technology

File Size 340.03K  /  13 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS10H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, TO-247-2L
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    IGD01N120H2 IGP01N120H207

Infineon Technologies AG
http://
Infineon Technologies A...
Part No. IGD01N120H2 IGP01N120H207
Description HighSpeed 2-Technology

File Size 905.76K  /  13 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS40N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, 2 in 1, TO-247
Tech specs    

Official Product Page

    APTM120H140FT1G

http://
Microsemi Corporation
Part No. APTM120H140FT1G
Description Full - Bridge MOSFET Power Module

File Size 137.94K  /  5 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS20N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, 2 in 1, TO-247
Tech specs    

Official Product Page

   
Part No. FD120H06A5BTPBF
Description 600 V, SILICON, RECTIFIER DIODE

File Size 53.61K  /  2 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS20H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, TO-247-2L
Tech specs    

Official Product Page

    STGW30NC120HD STGW30NC120HD_07 GW30NC120HD STGW30NC120HD07

STMICROELECTRONICS[STMicroelectronics]
Part No. STGW30NC120HD STGW30NC120HD_07 GW30NC120HD STGW30NC120HD07
Description N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT

File Size 273.79K  /  13 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS15N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247
Tech specs    

Official Product Page

    NXH80B120H2Q0SG

ON Semiconductor
Part No. NXH80B120H2Q0SG
Description Dual Boost Power Module

File Size 260.53K  /  11 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS10N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, 2 in 1, TO-247
Tech specs    

Official Product Page

    SynQor Worldwide Headqu...
Part No. PQ50120HZB55 PQ50120HZB55PNS-G
Description Delivers up to 55A of output current (660W)

File Size 1,694.21K  /  14 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS15H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, TO-247-2L
Tech specs    

Official Product Page

    Microsemi, Corp.
White Electronic Designs, Corp.
Part No. WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE128K32NP-120H1Q WE128K32NP-150H1Q WE128K32NP-140H1Q WE128K32NP-140H1QA WE128K32NP-200H1QA WE128K32NP-250H1Q WE128K32NP-150H1QA WE128K32NP-120H1QA
Description EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66

File Size 403.23K  /  14 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS30N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, 2 in 1, TO-247
Tech specs    

Official Product Page

    MAZZ000H MAZZ062H MAZZ068H MAZZ082H MAZZ100H MAZZ120H

Panasonic Semiconductor
Part No. MAZZ000H MAZZ062H MAZZ068H MAZZ082H MAZZ100H MAZZ120H
Description Small-signal device - Diodes - Zener Diodes
Silicon planar type

File Size 51.56K  /  3 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS40H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, TO-247-2L
Tech specs    

Official Product Page

    PANASONIC[Panasonic Semiconductor]
Part No. MAZW120H MAZW000H MAZW062H MAZW068H MAZW082H MAZW100H
Description Silicon planar type For surge absorption circuit

File Size 72.09K  /  3 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TRS30H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, TO-247-2L
Tech specs    

Official Product Page

For OTC2470-120H Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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