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				Infineon Technologies AG
Part No.	BUZ21L BUZ21LE3045
OCR Text	... 1.67 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 21L Electrical Characteristics, at Tj = 25C, unless otherwise spec...BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 1.6...
Description	N-Channel SIPMOS Power Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL SIPMOS Power Transistor
File Size	88.89K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IPB057N06N
OCR Text	...5?c 83 w t a =25 c, r thja =50?k/w 3.0 operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/...br)dss v gs =0?v, i d =1?ma 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =36?a 2.1 2...
Description	OptiMOSTM Power-Transistor
File Size	549.81K / 9 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ255 C67078-S1406-A2
OCR Text	...0 1.32 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 255 Not for new design Electrical Characteristics, at Tj = 25C, unless otherw...BR)DSS 250 3 0.1 10 10 0.22 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage ...
Description	From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
File Size	127.89K / 9 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ272 C67078-S1454-A2
OCR Text	... 150 1 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 272 Electrical Characteristics, at Tj = 25C, unless other...BR)DSS -100 -3 -0.1 -10 -10 0.2 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 C Gate threshold volt...
Description	From old datasheet system SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
File Size	202.45K / 9 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	BYM36 BYM36E BYM36A BYM36B BYM36C BYM36D
OCR Text	...A Value 25 70 VISHAY Unit K/W K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage IF ...BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr 300 500 700 900 1100 100 150 Min Typ. Max 1.6 1.78 1.22 1.2...
Description	Fast Avalanche Sinterglass Diode
File Size	140.42K / 5 Page	View it Online	Download Datasheet

				LRC[Leshan Radio Company]
Part No.	MMBT2907ALT1 MMBT2907LT1
OCR Text	...E TIME <2.0 ns P.W. <200 ns 1.0 k 0 -16 V 200 ns 50 INPUT -30 V 200 Z O= 50 PRF = 150 PPS RISE TIME <2.0 ns P.W. < 200 ns 0 -30 V 200 ns Figure 2. Storage and Fall Time Test Circuit 50 1N916 +15 V 1.0 k 1.0 k TO OSCILLOSCOPE RISE TIME <...
Description	General Purpose Transistor(PNP Silicon)
File Size	189.13K / 4 Page	View it Online	Download Datasheet

				乐山无线电股份有限公 Leshan Radio Company
Part No.	BCW69LT1 BCW70LT1
OCR Text	...dc, I C = - 0.2 mAdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz) 260 500 - 0.3 - 0.75 Vdc Vdc -- - 0.6 BE(on) SMALL-SIGNAL CHARACTERISTICS C obo NF -- -- 7.0 10 pF dB M13-2/6 LESHAN RADIO COMPANY, LTD. BCW69LT1 BCW70LT1 TYPICA...
Description	General Purpose Transistors(PNP Silicon)
File Size	249.92K / 6 Page	View it Online	Download Datasheet

				Comchip Technology
Part No.	MMBT3906
OCR Text	... mAdc, VCE = -5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) fT 250 Cobo -- Cibo -- hie 2.0 hre 0.1 hfe 100 hoe 3.0 NF -- 4.0 MHz -- pF 4.5 pF 10 k 12 X 10- 4 10 -- 400 mmhos 60 dB SWITCHING CHARACTER...
Description	General Purpose Transistor (PNP)
File Size	120.58K / 5 Page	View it Online	Download Datasheet

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