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				Anpec Electronics Corporation ETC[ETC] ANPEC[Anpec Electronics Coropration] http://
Part No.	APM4835 APM4835kC-TR APM4835kC-TU
OCR Text	...hannel MOSFET P ackage C ode k : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : ...16 24 -0.7 48 VDS= -15V, V GS= -10V, ID= -4.6A 10 9 16 VDD= -25V, ID= -2A, VGEN= -10V, RG=6 RL=12.5 ...
Description	P-Channel Enhancement Mode MOSFET
File Size	125.16K / 9 Page	View it Online	Download Datasheet

				Rohm CO.,LTD. ROHM[Rohm]
Part No.	BA3131FS BA3131
OCR Text	...ng a bias resistance of several k to the negative input (R11 and R12 in Figure 13, indicated as circled items) results in greater stability ...16 Distortion vs. output voltage 4.1 REFERENCE VOLTAGE :Vref (V) Vcc = 8V SINk 4.0 SOURC...
Description	Dual operational amplifier with switch, for audio use (3 inputs × 1 output × 2) ER 14C 14#16 PIN PLUG Dual operational amplifier with switch/ for audio use (3 inputs 1 output 2) Dual operational amplifier with switch, for audio use (3 inputs 1 output 2) Dual operational amplifier with switch, for audio use (3 inputs 】 1 output 】 2) Standard Linear LSIs > Operational amplifier > Operational amplifier with input multiplexer
File Size	107.77K / 9 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC Broadcom Corporation.
Part No.	BCM3116
OCR Text	...ellis decoder * Reed-Solomon (n,k) = (128,122); t = 3 * Programmable convolutional deinterleaver, IJ <128 with internal RAM, IJ>128 with external RAM * Enhanced digital adaptive equalization * IC or SPI-compatible microcontroller in...
Description	QAMLINk RECEIVER QAMLink® 64/256-QAM ITU-B Receiver
File Size	242.96K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BCM846S
OCR Text	...mW C Value Unit 140 k/W 1 Aug-30-2002 BCM846S Electrical Characteristics at TA = 25C, unless otherwise specified Param...16 uA IB = 12 uA IB = 8 uA IB = 4uA 10 2 5 -50 C IC 10 9 8 7 6 10 1 5 5 4 3 2 1 1...
Description	NPN Silicon AF Transistor Array
File Size	183.86K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG520W BFG520W_X BFG520W/X
OCR Text	...Ts 85 C; note 1 VALUE 180 UNIT k/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) t...16 Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz s = opt; IC = 20 mA; VCE = 6 V; f = 900 MH...
Description	NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体 NPN 9 GHz wideband transistors
File Size	154.15K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text	...; note 1 THERMAL RESISTANCE 290 k/W September 1995 3 Philips Semiconductors Product specification NPN 9 GHz wideband transist...16 Noise circle figure. September 1995 8 Philips Semiconductors Product specification ...
Description	NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体
File Size	146.07K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	...6 RthJC RthJA 3 115 55 k/W 2004-03-05 BTS 118 D Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified ...16 A 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: VIN 24 A 12 20 ...
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BUH1215 4496
OCR Text	...z I B2 = -1.5 A 6 V c eflybac k = 1050 sin 10 t V 5 ts tf INDUCTIVE LO AD Storage Time Fall Time f = 64 kHz V BE(off ) = -2 A ...16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.4...
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR From old datasheet system
File Size	73.01K / 7 Page	View it Online	Download Datasheet

				Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	BUX41 ON0260
OCR Text	...kONG: Motorola Semiconductors H.k. Ltd.; 8B Tai Ping Industrial Park, 51 Ting kok Road, Tai Po, N.T., Hong kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data BUX41/D BUX41/D
Description	15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS From old datasheet system
File Size	122.51K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	... VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 72 50 TC = 25 C TC = 80 C Pulsed collector current...16 14 12 10 8 C 10 1 800 V 1200 V Ciss 10 0 6 Coss 4 2 0 0.0 10 0.1 0.2 0.3 0.4 0.5 0...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

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