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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI8N25 FQB8N25 FQB8N25TM FQB8N25TMNL
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Cont...3)
Units V A A A V mJ A mJ V/ns W W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy... |
| Description |
250V N-Channel QFET 250V N-Channel MOSFET
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| File Size |
592.30K /
9 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI8P10 FQB8P10
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Cont...3)
Units V A A A V mJ A mJ V/ns W W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy... |
| Description |
100V P-Channel MOSFET
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| File Size |
664.50K /
9 Page |
View
it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQP4P25
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy A... |
| Description |
250V P-Channel MOSFET
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| File Size |
567.45K /
8 Page |
View
it Online |
Download Datasheet
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Littelfuse, Inc. Microsemi, Corp.
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| Part No. |
3KP7.5C 3KP8.5A 3KP7.0A
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| OCR Text |
... maximum stand by current @vwm+ id 10/1000s maximum clamping voltage @ippm# vc max 10/1000s rated peak impulse current ippm# vbr (volts) @it...3 291.3 3kp6.5 6.50 7.22 9.14 10 500 12.3 243.9 3kp6.5a 6.50 7.22 8.30 10 500 11.2 267.9 3kp7.0 7.00... |
| Description |
3000 W, BIDIRECTIONAL, SILICON, TVS DIODE 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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| File Size |
87.80K /
5 Page |
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it Online |
Download Datasheet
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