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  id-3.0a Datasheet PDF File

For id-3.0a Found Datasheets File :: 5467    Search Time::2.203ms    
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    P6SMBJ36 P6SMBJ13 P6SMBJ90A P6SMBJ10 P6SMBJ100 P6SMBJ100A P6SMBJ10A P6SMBJ11 P6SMBJ110 P6SMBJ110A P6SMBJ11A P6SMBJ12 P6S

FORMOSA[Formosa MS]
美丽微半导体有限公司
Formosa Microsemi Co., Ltd.
缇?附寰??瀵间???????
Part No. P6SMBJ36 P6SMBJ13 P6SMBJ90A P6SMBJ10 P6SMBJ100 P6SMBJ100A P6SMBJ10A P6SMBJ11 P6SMBJ110 P6SMBJ110A P6SMBJ11A P6SMBJ12 P6SMBJ120 P6SMBJ12A P6SMBJ130 P6SMBJ130A P6SMBJ13A P6SMBJ14 P6SMBJ14A P6SMBJ15 P6SMBJ150 P6SMBJ150A P6SMBJ15A P6SMBJ16 P6SMBJ160 P6SMBJ160A P6SMBJ16A P6SMBJ17 P6SMBJ170 P6SMBJ170A P6SMBJ17A P6SMBJ18 P6SMBJ18A P6SMBJ20 P6SMBJ20A P6SMBJ22 P6SMBJ22A P6SMBJ24 P6SMBJ24A P6SMBJ26 P6SMBJ26A P6SMBJ28 P6SMBJ28A P6SMBJ30 P6SMBJ30A P6SMBJ33 P6SMBJ33A P6SMBJ36A P6SMBJ40 P6SMBJ40A P6SMBJ43 P6SMBJ43A P6SMBJ45 P6SMBJ45A P6SMBJ48 P6SMBJ48A P6SMBJ5.0 P6SMBJ5.0A P6SMBJ51 P6SMBJ51A P6SMBJ54 P6SMBJ54A P6SMBJ58 P6SMBJ58A P6SMBJ6.0 P6SMBJ6.0A P6SMBJ6.5 P6SMBJ6.5A P6SMBJ60 P6SMBJ60A P6SMBJ64 P6SMBJ64A P6SMBJ7.0 P6SMBJ7.0A P6SMBJ7.5 P6SMBJ7.5A P6SMBJ70 P6SMBJ70A P6SMBJ75 P6SMBJ75A P6SMBJ78 P6SMBJ78A P6SMBJ8.0 P6SMBJ8.0A P6SMBJ8.5 P6SMBJ8.5A P6SMBJ85 P6SMBJ85A P6SMBJ9.0 P6SMBJ9.0A P6SMBJ90
OCR Text ...ATE (DUTY CYCLE)0.01% ! TYPICAL ID LESS THAN 1A ABOVE 10V ! HIGH TEMPERATURE SOLDERING GUARANTEED:250/10 SECONDS AT TERMINAL CATHODE P6S...3.94) .130(3.30) .060(1.52) .030(0.76) MECHANICAL DATA ! CASEMOLDED PLASTIC ! TERMINALSSOLDER ...
Description BBG ECL 3.3V LO IMPED DRV; Package: TSSOP 8 3.0x3.0x0.95 mm; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
From old datasheet system
Quad 4-Input OR/NOR Gate; Package: 28 LEAD PLCC; No of Pins: 28; Container: Tape and Reel; Qty per Container: 500
NECL OUTPUT TRANSLATOR; Package: QFN 4x4 mm, 24 PIN; No of Pins: 24; Container: Rail; Qty per Container: 92
3.3V ECL Triple D-Type Flip-Flop with Set and Reset; Package: SOIC-20 WB; No of Pins: 20; Container: Tape and Reel; Qty per Container: 1000
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 600W表面贴装瞬态电压抑制器

File Size 77.23K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI8N25 FQB8N25 FQB8N25TM FQB8N25TMNL
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy...
Description 250V N-Channel QFET
250V N-Channel MOSFET

File Size 592.30K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI8P10 FQB8P10
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy...
Description 100V P-Channel MOSFET

File Size 664.50K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQP4P25
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy A...
Description 250V P-Channel MOSFET

File Size 567.45K  /  8 Page

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    IRLML5203PBF

International Rectifier
Part No. IRLML5203PBF
OCR Text ...8@VGS = -10V 165@VGS = -4.5V ID -3.0A -2.6A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides t...
Description HEXFET?Power MOSFET
HEXFET㈢Power MOSFET

File Size 183.96K  /  9 Page

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    FW245

SANYO[Sanyo Semicon Device]
Part No. FW245
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Rating...
Description DC / DC Converter Applications

File Size 32.73K  /  4 Page

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    IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy...
Description 200V N-Channel B-FET / Substitute of IRFI630A
200V N-Channel MOSFET

File Size 646.27K  /  9 Page

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    IRFI530NPBF IRFI530NPBF-15

International Rectifier
Part No. IRFI530NPBF IRFI530NPBF-15
OCR Text ...S = 100V G S RDS(on) = 0.11 ID = 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing...3.7 65 Units C/W 06/16/04 IRFI530NPbF Electrical Characteristics @ TJ = 25C (unless otherwis...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
   ADVANCED PROCESS TECHNOLOGY

File Size 221.57K  /  9 Page

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    IRF530NLPBF IRF530NSPBF

International Rectifier
Part No. IRF530NLPBF IRF530NSPBF
OCR Text ...0V RDS(on) = 90m D G S ID = 17A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techni...3.8 70 0.47 20 9.0 7.0 7.4 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V A mJ V/ns C ...
Description HEXFET Power MOSFET

File Size 269.59K  /  10 Page

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    Littelfuse, Inc.
Microsemi, Corp.
Part No. 3KP7.5C 3KP8.5A 3KP7.0A
OCR Text ... maximum stand by current @vwm+ id 10/1000s maximum clamping voltage @ippm# vc max 10/1000s rated peak impulse current ippm# vbr (volts) @it...3 291.3 3kp6.5 6.50 7.22 9.14 10 500 12.3 243.9 3kp6.5a 6.50 7.22 8.30 10 500 11.2 267.9 3kp7.0 7.00...
Description 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

File Size 87.80K  /  5 Page

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For id-3.0a Found Datasheets File :: 5467    Search Time::2.203ms    
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