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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ657
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| OCR Text |
...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
...13A Ratings min --100 --1 10 -1.2 21 30 --2.6 typ max Unit V A A V S
Marking : J657
Continued ... |
| Description |
General-Purpose Switching Device
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| File Size |
31.12K /
4 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4720
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| OCR Text |
...ns).
Features
VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11m (VGS = 10V) RDS(ON) < 17.5m (VGS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
G S
SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
Ab... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
125.69K /
4 Page |
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ANPEC[Anpec Electronics Coropration]
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| Part No. |
APM4429KTU-CK APM4429 APM4429KTR-CK
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| OCR Text |
...ximum Ratings
Symbol VDSS VGSS ID
*
(TA = 25C unless otherwise noted)
Rating -30 20 TA = 25C -13 -50 Unit V A
Parameter Drain-Sourc...13A V G S =-10V , I D S =-13A V G S =-4.5V , I D =-12A
V A V nA
D iode F orw ard Voltag e
>... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
277.43K /
9 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50H14FT3G
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| OCR Text |
ID = 26A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
18 22 19 Q2 23 8 Q4...13A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V
Max 100 500 168 5 100
Unit A m V nA
Dynamic Ch... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
298.06K /
6 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BSP125
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| OCR Text |
...
Product Summary VDS RDS(on) ID 600 45 0.12
SOT-223
V A
Type BSP125
Package SOT-223
Ordering Code Q62702-S654
Tape and R...13A, VGS =0 to 10V VDD =400V, ID =0.13A
Symbol
Conditions min.
Values typ. 0.18 100 8.2 3.2... |
| Description |
SIPMOS Power-Transistor
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| File Size |
118.85K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDZ206P
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| OCR Text |
...ximum Ratings
Symbol
VDSS VGS ID PD TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) -...13A, Diode Reverse Recovery Charge diF/dt = 100 A/s
(Note 2)
-0.7 34 38
-1.8 -1.2
a)
56... |
| Description |
P-Channel 2.5V Specified PowerTrench
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| File Size |
215.92K /
5 Page |
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it Online |
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http://
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI13N50C FQB13N50C FQI13N50CTU
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...13A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 13A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25... |
| Description |
500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series
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| File Size |
644.67K /
9 Page |
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it Online |
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Price and Availability
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