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  hi-spd Datasheet PDF File

For hi-spd Found Datasheets File :: 434    Search Time::1.313ms    
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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M390S2858DT1-C7C M390S2858DT1 M390S2858DT1-C7A
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) The devic...SPD memory device Fundamental memory type # of row address on this assembly # of column address on t...
Description 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD 128Mx72 SDRAM的内存与锁相
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet

File Size 238.38K  /  12 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M390S2858CTU-C7C M390S2858CTU M390S2858CTU-C1H M390S2858CTU-C1L M390S2858CTU-C7A
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) The devic...SPD memory device Fundamental memory type # of row address on this assembly # of column address on t...
Description PC133/PC100 Low Profile Registered DIMM
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD. Low Profile Registered DIMM. Data Sheet

File Size 243.18K  /  12 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L M347S6453CTS-C7A M347S6453CTS-C7C M347S6453CTS-L1H M347S6453CTS-L1L M374S6453CTS-L7A M374S6453CTS
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inpu...SPD memory device Fundamental memory type # of row address on this assembly # of column address on t...
Description 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM

File Size 164.01K  /  11 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M366S3253CTS-L7C M366S3253CTS M366S3253CTS-C1H M366S3253CTS-C1L M366S3253CTS-C7A M366S3253CTS-C7C M366S3253CTS-L1H M366S3253CTS-L1L M366S3253CTS-L7A
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inpu...SPD memory device Fundamental memory type # of row address on this assembly # of column address on t...
Description 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet

File Size 147.57K  /  11 Page

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    Samsung Semiconductor Co., Ltd.
Part No. M366S1623ET0
OCR Text ...t/output mask makes data output hi-z, t shz after the clock and masks the output. blocks data input when dqm active. (byte masking) dq0 ~ 6...spd 1.2b ver. base) byte # function described function supported hex value note -75 -75 0 # of bytes...
Description 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM的内存在8Mx8BanksK的刷新,3.3社民党基于同步DRAM

File Size 116.25K  /  12 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. M366S1623DT0-C80 M366S1623DT0 M366S1623DT0-C1H M366S1623DT0-C1L
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. WP pin is connected to VSS through 47K Resistor. When W...
Description PC100 Unbuffered DIMM

File Size 135.45K  /  9 Page

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    SAMSUNG[Samsung semiconductor]
Part No. M366S1623DT0-C7A
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. WP pin is connected to VSS through 47K Resistor. When W...
Description PC133 Unbuffered DIMM

File Size 153.07K  /  10 Page

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    SAMSUNG[Samsung semiconductor]
Part No. M366S1623DT0-C75
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. WP pin is connected to VSS through 47K Resistor. When W...
Description PC133 Unbuffered DIMM

File Size 153.13K  /  10 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM366S403CTL-G0 KMM366S403CTL
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. Power and ground for the input buffers and the core log...
Description PC66 SDRAM MODULE

File Size 161.87K  /  11 Page

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    K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC7A K4S560832D-TC7C K4S560832D-TL1H K4S560832D-TL1L K4S560832D-TL7A K4S56083

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC7A K4S560832D-TC7C K4S560832D-TL1H K4S560832D-TL1L K4S560832D-TL7A K4S560832D-TL7C M366S3253DTS M366S3253DT
OCR Text ...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inpu...SPD memory device Fundamental memory type # of row address on this assembly # of column address on t...
Description 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet

File Size 147.50K  /  11 Page

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For hi-spd Found Datasheets File :: 434    Search Time::1.313ms    
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