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NXP Semiconductors N.V.
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Part No. |
PHN210T
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OCR Text |
fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consum...30v i d drain current t sp = 25 c; single device [1] --3.4a p tot total power dissipation t sp =25c... |
Description |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
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File Size |
128.68K /
13 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AO4607
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OCR Text |
...co-packaged with the n- channel fet to minimize body diode losses. ao4607 is pb-free (meets rohs & sony 259 specifications). ao4607l is ...30v ma gate-body leakage current v ds =0v, v gs =20v v r =30v, t j =125c v r =30v, t j =150c gate th... |
Description |
Complementary Enhancement Mode Field Effect Transistor
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File Size |
407.02K /
8 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
BUK7506-55B
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OCR Text |
fet rev. 02 ? 21 june 2010 product data sheet 1. product profile 1.1 general description standard level n-channel enhancement mode field-ef...30v; r l =1.2 ? ; v gs =10v; r g(ext) =10 ? ; t j =25c -30-ns t r rise time v ds =30v; r l =1.2 ? ;... |
Description |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
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File Size |
156.86K /
14 Page |
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it Online |
Download Datasheet
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Price and Availability
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