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  fet-30v Datasheet PDF File

For fet-30v Found Datasheets File :: 2498    Search Time::1.875ms    
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    SMG2306N

SeCoS Halbleitertechnologie GmbH
Part No. SMG2306N
OCR Text fet 12-apr-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view...30v , r ds(on) 58 m ? n-channel enhancement mode mos.fet 12-apr-2011 rev. b page 2 of 4 h...
Description N-Channel Enhancement Mode Mos.FET

File Size 563.03K  /  4 Page

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    AP9060FM8-7 AP9060

Diodes Incorporated
Part No. AP9060FM8-7 AP9060
OCR Text ...cing the drive to the p-channel fet. the output voltage is clamped at 11.15v to ensure that a following pmic can detect a faulty charge...30v ? ultra-low bias current ? integrated low on-resistance p-channel fet ? output voltage ...
Description OVERVOLTAGE CLAMP

File Size 295.54K  /  9 Page

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    STT6602

SeCoS Halbleitertechnologie GmbH
Part No. STT6602
OCR Text ... p-channel enhancement mode mos.fet elektronische bauelemente 15-aug-2011 rev. a page 1 of 7 http://www.secosgmbh.com/ any cha...30v, r ds(on) 65 m ? p-ch: -2.3a, -30v, r ds(on) 120 m ? n & p-channel enhancement mod...
Description N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

File Size 2,986.41K  /  7 Page

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    NXP Semiconductors N.V.
Part No. PHN210T
OCR Text fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consum...30v i d drain current t sp = 25 c; single device [1] --3.4a p tot total power dissipation t sp =25c...
Description Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

File Size 128.68K  /  13 Page

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    PMWD19UN

NXP Semiconductors
Part No. PMWD19UN
OCR Text fet rev. 01 20 december 2002 product data m3d647 1. product pro?le 1.1 description dual n-channel enhancement mode ?eld-effect transistor i...30v v gs gate-source voltage - 10 v i d drain current (dc) t sp =25 c; v gs = 4.5 v; figure 2 and ...
Description Dual uTrenchMOS ultra low level FET

File Size 110.30K  /  12 Page

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    BD9031FV-C BD9031FV-CE2

ROHM
Part No. BD9031FV-C BD9031FV-CE2
OCR Text ...ency: 20khz to 600khz ? pch fet on resistance: 6 (typ.) ? nch fet on resistance: 0.84 (typ.) ? standby current: 0 a (t yp...30v , - 40 c t op 125c , current flowing from the ic is defined +) parameter symb ol ra...
Description 1 Channel Step-up Switching Regulator Controller

File Size 644.58K  /  26 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4607
OCR Text ...co-packaged with the n- channel fet to minimize body diode losses. ao4607 is pb-free (meets rohs & sony 259 specifications). ao4607l is ...30v ma gate-body leakage current v ds =0v, v gs =20v v r =30v, t j =125c v r =30v, t j =150c gate th...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 407.02K  /  8 Page

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    NXP Semiconductors N.V.
Part No. BUK7506-55B
OCR Text fet rev. 02 ? 21 june 2010 product data sheet 1. product profile 1.1 general description standard level n-channel enhancement mode field-ef...30v; r l =1.2 ? ; v gs =10v; r g(ext) =10 ? ; t j =25c -30-ns t r rise time v ds =30v; r l =1.2 ? ;...
Description N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管

File Size 156.86K  /  14 Page

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