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Winbond Electronics, Corp.
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| Part No. |
W567S210
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| OCR Text |
...ital mixer to produce colorful effects. the mixer is further processed to drive dual speakers with ster eo effects. with these hardware resources, the w567sxxx is very suitable for high-qualit y and sophisticated scenario applications. ... |
| Description |
8-CHANNEL SPEECH MELODY PROCESSOR (BandDirectorTM Series) 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, QFP100
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| File Size |
274.50K /
13 Page |
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it Online |
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ANADIGICS, Inc.
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| Part No. |
AWM6432
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| OCR Text |
...v 1.1 11/2006 awm6432 figure 9: effects of bias voltage (v bias ) on evm (t c = +25 c, v cc = +6.0 v, f = 3.5 ghz, 54 mbps ofdm modulation, system evm approx. 0.8 %) figure 10: effects of supply voltage (v cc ) on evm (t c = +25 c, v bia... |
| Description |
3.3-3.6 GHz WiMAX PowerAmplifier Module 3日至3号GHz的WiMAX PowerAmplifier模块
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| File Size |
218.51K /
12 Page |
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it Online |
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Microchip Technology, Inc.
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| Part No. |
TC2185
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| OCR Text |
... output voltage due to heating effects are covered by the thermal regulation specification. 5: dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a v differential... |
| Description |
50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass 50毫安00毫安，一百五十零毫安的CMOS低压降稳压器具有关断和参考旁
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| File Size |
353.71K /
18 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
JANSR2N7494U5
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| OCR Text |
... characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters ... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) 抗辐射功率MOSFET表面贴装（持有LCC - 18
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| File Size |
131.49K /
8 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRHN8450
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| OCR Text |
...rized in heavy ion single event effects (see) environments. single event effects char- acterization is shown in table 3. table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min typ max min typ max units test cond... |
| Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管（之HEXFET晶体管）
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| File Size |
311.15K /
12 Page |
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it Online |
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Price and Availability
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