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MPLUSE[M-pulse Microwave Inc.]
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Part No. |
MP4T24335 MP4T243 MP4T24300
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OCR Text |
Driv er Amplifier Transistor *Operation to 8 GHz *Av ailable as Chip *Av ailable in Hermetic Surface Mount Packages Description The MP4T24300 series of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 ... |
Description |
Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
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File Size |
78.80K /
7 Page |
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IRF[International Rectifier]
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Part No. |
IRGB420U IRGB420 INTERNATIONALRECTIFIER-IRGB420
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OCR Text |
...% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r Diss ipa tio n = 1 4W S quare w ave: 60% of rated voltage
C lam p voltage: 80% of rated
12
8
4
Ideal diodes
0 0.1 1 10 100
f, F re quency (kH z)
Fig. 1 ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
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File Size |
217.34K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRGBF30F IRGBF30
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OCR Text |
...% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r D is s ip a tio n = 2 1 W
C la m p v o lta g e : 8 0 % o f ra te d
15
S q u a re w a v e : 6 0 % o f ra te d v o lta g e
10
5
Id ea l d io d e s
0 0.1 1 10 100... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
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File Size |
217.06K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRGPC20U
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OCR Text |
...% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r D is s ip a tio n = 1 5 W
C la m p v o lta g e : 8 0 % o f ra te d
12
S quare w av e: 6 0 % o f ra te d vo lta g e
8
4
Id e a l d io d e s
0 0.1 1 10 100
f,... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A)
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File Size |
220.80K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRGPC30U
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OCR Text |
...% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r D is s ip a tio n = 2 4 W S quare w av e:
C la m p v o lta g e : 8 0 % o f ra te d
20
6 0 % o f ra te d vo lta g e
10
Id e a l d io d e s
0 0.1 1 10 100
f, F... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
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File Size |
212.48K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRGPF20F
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OCR Text |
... TJ = 125C T s in k = 90C G ate driv e as specified P ow er D iss ipa tion = 1 5W
C lam p v oltage: 80% of rated
9
S quare w a ve: 60% of rated v oltage
6
3
Id e a l d io d e s
0 0.1 1 10 100
f, F re quency (kH z)
Fig... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A)
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File Size |
223.56K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRGPF40F
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OCR Text |
...% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r Diss ipa tio n = 3 5W
C lamp voltage: 80% of rated
30
S quare w ave: 60% of rated voltage
20
10
Ideal diodes
0 0.1 1 10 100
f, F re quency (kH z)
Fig. 1 ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V,@Vge=15V, Ic=17A)
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File Size |
222.15K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRGPH20M IRGPH20
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OCR Text |
...% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r D is s ip a tio n = 1 5 W S q u a re w a v e :
C la m p v o lta g e : 8 0 % o f ra te d
6
6 0 % o f ra te d v o lta g e
3
Id ea l d io d e s
0 0.1 1 10
A
... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A)
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File Size |
203.42K /
6 Page |
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it Online |
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Price and Availability
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