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TY Semiconductor Co., Ltd
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Part No. |
AOB10T60P
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OCR Text |
...osfet dv/dt ruggedness 10* peak diode recovery dv/dt j c 6.6* avalanche current c aotf10t60pl 10* 6.6* 33 480 50 10 40 600 30 50 15 -55 to...100v turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =10a, r g =25 w i f =10a,di/dt... |
Description |
Trench Power AlphaMOS-II technology
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File Size |
1,147.02K /
7 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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Part No. |
APT20M11JLL
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OCR Text |
...ergy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions C...100V
100 50
TJ =+150C TJ =+25C
VDS=160V
10 5
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 ... |
Description |
POWER MOS 7 MOSFET
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File Size |
165.20K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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Part No. |
APT20M11JFLL
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OCR Text |
...27 Package * FAST RECOVERY BODY DIODE
APT20M11JFLL
D G S
All Ratings: TC = 25C unless otherwise specified.
UNIT Volts Amps
200 17...100V ID = 176A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 176A @ 25C 6 INDUCTIVE SWITCHING ... |
Description |
POWER MOS 7 FREDFET
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File Size |
166.23K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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Part No. |
APT10M19SVFR APT10M19BVFR APT10M19BVFR_04 APT10M19BVFR04
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OCR Text |
...ergy Rated * FAST RECOVERY BODY DIODE
G S D
* TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,...100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125C) Gate-Source Leakage... |
Description |
POWER MOS V FREDFET
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File Size |
115.86K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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