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NXP Semiconductors N.V.
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| Part No. |
BLF7G15LS-200
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| OCR Text |
... performance at t case = 25 ? c in a common source class-ab production test circuit. mode of operation f i dq v ds p l(av) g p ? d acpr (m...200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all ... |
| Description |
Power LDMOS transistor
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| File Size |
95.74K /
11 Page |
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it Online |
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Bivar Inc.
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| Part No. |
362-200 361-200
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| OCR Text |
c ?.032 [?0.8mm] 0.053 [1.3mm] basf ultramid nylon 6/6 a3k white. 1. general specifications: bivar molded component specification bv00-...200 365-300 362-200 366-300 361-200 .060 (1.5) .030 (7.6) .397 (10.1) .365 (9.3) .300 (7.6) .176 (4.... |
| Description |
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| File Size |
13.44K /
1 Page |
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it Online |
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意法半导 STMicroelectronics N.V.
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| Part No. |
BYW51G-200
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| OCR Text |
...forward current d = 0.5 tc=120 c per diode 10 a i fsm surge non repetitive forward current tp=10ms sinusoidal per diode 100 a t stg tj stor...200 v k a2 a1 a1 k a2 1/5
symbol test conditions min. typ. max. unit i r * t j =25 cv r =v rrm 15... |
| Description |
High Efficiency Fast Recovery Rectifier Diodes(高效快速修复整流二极管) 高效快速恢复整流二极管(高效快速修复整流二极管
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| File Size |
69.41K /
5 Page |
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it Online |
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意法半导
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| Part No. |
BYW51F-200
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| OCR Text |
...current d = 0.5 to220ab tc=120 c per diode 10 a isowatt220ab tc=95 c per diode 10 i fsm surge non repetitive forward current tp=10ms sinus...200 v a1 k a2 a1 k a2 a1 k a2 1/6
symbol test conditions min. typ. max. unit i r *t j =25 cv r =v... |
| Description |
High Efficiency Fast Recovery Rectifier Diodes(高效快速修复整流二极管)
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| File Size |
81.37K /
6 Page |
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it Online |
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