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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
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| Part No. |
CY7C1372DV25-250BGC CY7C1370DV25-200AXI CY7C1372DV25-167BGXI CY7C1372DV25-200BGXC CY7C1372DV25-167AXIT CY7C1370DV25-200BGCT
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| OCR Text |
...uts) for pipelined operation ? byte write capability ? single 2.5v core power supply (v dd ) ? 2.5v i/o power supply (v ddq ) ? fast clock-to-output times ? 2.6 ns (for 250-mhz device) ? clock enable (cen ) pin to suspend operation ? synch... |
| Description |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
1M X 18 ZBT SRAM, 3.4 ns, PQFP100
512K X 36 ZBT SRAM, 3 ns, PBGA119
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| File Size |
533.02K /
27 Page |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
24C04 ST25C04 ST25C04B1TR ST25C04B3TR ST25C04B5TR ST25C04B6TR ST25C04M1TR ST25C04M3TR ST25C04M5TR ST25C04M6TR ST24C04 ST24C04B1TR ST24C04B3TR ST24C04B5TR ST24C04B6TR ST24C04M1TR ST24C04M3TR ST24C04M5TR ST24C04M6TR ST25W04 ST25W04B1TR ST25W04B3TR ST25W04B5TR ST25W04B6TR ST25W04M1TR ST25W04M3TR ST25W04M5TR ST25W04M6TR ST24W04 ST24W04B1TR ST24W04B3TR ST24W04B5TR ST24W04B6TR ST24W04M1TR ST24W04M3TR ST24W04M5TR ST24W04M6TR 2435 ST24W04B3 ST24W04M1 -24C04
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| OCR Text |
...RFACE, FULLY I2C BUS COMPATIBLE byte and MULTIbyte WRITE (up to 4 byteS) PAGE WRITE (up to 8 byteS) byte, RANDOM and SEQUENTIAL READ MODES SELF TIMED PROGRAMMING CYCLE AUTOMATIC ADDRESS INCREMENTING ENHANCED ESD/LATCH UP PERFORMANCES
8 1... |
| Description |
KIT, NIOS FOR CYCLONE II; Kit contents:Nios II Development Board, Nios II IDE, Quartus II Web Edition design software, SOPC Builder system integration tool, Cables and accessories, Design examples and applications RoHS Compliant: Yes
IC MAX 7000 CPLD 256 208-PQFP
PowerPak; Charge, gate n-channel:27nC; Current, Idm pulse:40A; Depth, external:5.26mm; RoHS Compliant: Yes
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:80V; Case style:PowerPak SO-8; Current, Id cont:7.6A
(ST2xxx) 4 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
From old datasheet system
4 Kbit Serial I 2 C Bus EEPROM with User-Defined Block Write Protection
4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection
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| File Size |
123.70K /
16 Page |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1372D-250BGXC CY7C1372D-250BGXI CY7C1372D-250BZXC CY7C1372D-200BGXC
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| OCR Text |
...uts) for pipelined operation ? byte write capability ? 3.3v core power supply (v dd ) ? 3.3v/2.5v i/o power supply(v ddq ) ? fast clock-to-output times ? 2.6 ns (for 250-mhz device) ? clock enable (cen ) pin to suspend operation ? synchron... |
| Description |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
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| File Size |
490.79K /
28 Page |
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Download Datasheet |
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STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
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| OCR Text |
...RFACE, FULLY I2C BUS COMPATIBLE byte and MULTIbyte WRITE (up to 8 byteS) for the ST24C16 PAGE WRITE (up to 16 byteS) byte, RANDOM and SEQUENTIAL READ MODES SELF TIMED PROGRAMING CYCLE AUTOMATIC ADDRESS INCREMENTING ENHANCED ESD/LATCH UP PER... |
| Description |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
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| File Size |
125.39K /
17 Page |
View
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Download Datasheet |
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Price and Availability
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