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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text ...mped Inductive Test Circuit V (b R )D SS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?<br>Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)<br>Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)<br>Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)<br>
File Size 105.33K  /  8 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ...mped Inductive Test Circuit V (b R )D SS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?<br>Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)<br>Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)<br>Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)<br>55V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>
File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...mped Inductive Test Circuit V (b R )D SS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?<br>Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)<br>Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)<br>Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)<br>
File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...mped Inductive Test Circuit V (b R )D SS tp 130 0 25 50 75 100 125 150 175 Starting T , Junction Temperature J ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)<br>Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)<br>Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)<br>TRANSISTOR | MOSFET | N-CHANNEL | 75V V(bR)DSS | 100A I(D) | TO-263Ab 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63Ab<br>
File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...mped Inductive Test Circuit V (b R )D SS tp 130 0 25 50 75 100 125 150 175 Starting T , Junction Temperature J ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?<br>Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)<br>POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)<br>Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)<br>Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)<br>
File Size 126.10K  /  9 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...mped Inductive Test Circuit V (b R )D SS tp 1000 500 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)<br>
File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...mped Inductive Test Circuit V (b R )D S S tp 400 0 25 50 75 100 125 150 175 200 Starting TJ , Junction Temperature ( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Cur...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?<br>Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??<br>Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)<br>POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)<br>Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)<br>Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)<br>
File Size 100.05K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1b902 IRF1902TR
OCR Text ...02 SO-8 Package Details D A 5 b DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1....c D E e e1 H K L y 1 2 3 4 .050 bAS IC .025 bAS IC .2284 .0099 .016 0 .2440 .0196 .05...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package<br>Power MOSFET(Vdss=20V)<br>
File Size 105.83K  /  9 Page

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...mped Inductive Test Circuit V (b R )D SS tp 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>55V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>AUTOMOTIVE MOSFET<br>
File Size 221.43K  /  11 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...mped Inductive Test Circuit V (b R )D SS tp 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Curre...
Description HEXFET Power MOSFET HEXFET功率MOSFET<br>75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>75V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>
File Size 122.50K  /  10 Page

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For b c-type Found Datasheets File :: 137985    Search Time::5.375ms    
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