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GSI Technology, Inc.
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| Part No. |
GS820E32AGT-133
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| OCR Text |
...low adv i burst address counter advan ce enable; active low adsp , adsc i address strobe (processor, cache controller); active low zz i sleep mode control; active high ft i flow through or pipeline mode; active low lbo i linear burst order... |
| Description |
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 10 ns, PQFP100
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| File Size |
408.56K /
20 Page |
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Download Datasheet
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFN1N60
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| OCR Text |
...t is produced using winse mi s advan ced planar stripe, vdmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well sui... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
403.24K /
7 Page |
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it Online |
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INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS61LSSS102418-250B IS61LSSS51236-300B
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| OCR Text |
... mode of operation has it?s own advan- tages and disadvantages. the user should consider the nature of the work to be done by the ram to evaluate which version is best suited to the application at hand. pin description table symbol pin loca... |
| Description |
1M X 18 STANDARD SRAM, 2.1 ns, PBGA165
512K X 36 STANDARD SRAM, 1.8 ns, PBGA165
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| File Size |
142.05K /
32 Page |
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it Online |
Download Datasheet |
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ATMEL CORP
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| Part No. |
AT49BV008AT-90CC AT49BV008AT-90TC
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| OCR Text |
...r can be tied to v cc . to take advan- tage of faster programming and erasing time, the pin should supply 4.5v to 5.5v during programming and erase operations. at49bv8192a(t) tsop top view type 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18... |
| Description |
1M X 8 FLASH 5V PROM, 90 ns, PBGA48
1M X 8 FLASH 5V PROM, 90 ns, PDSO40
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| File Size |
320.41K /
18 Page |
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it Online |
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Price and Availability
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