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Amphenol, Corp. SYNC-POWER[SYNC POWER Crop.]
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Part No. |
SPP4953S8TG SPP4953 SPP4953S8RG
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OCR Text |
...0m@VGS=- 6V -30V/-3.7A,RDS(ON)= 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP - 8P package design APPLICATIONS Power Management in Note book Portable ... |
Description |
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
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File Size |
213.45K /
8 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM2832CY TSM2832
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OCR Text |
... (on), Vgs @ 2.5V, Ids @ 3.1A = 90m
Pin assignment: 1. Gate 2. Drain 3. Source
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operat... |
Description |
20V N-Channel Enhancement Mode MOSFET
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File Size |
166.77K /
5 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM3442CX6 TSM3442
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OCR Text |
... (on), Vgs @ 2.5V, Ids @ 3.1A = 90m
Features
Advanced trench process technology High density cell design for ultra low on-resistance N-Channel 2.5V (G-S) MOSFET Excellent thermal and electrical capabilities Compact and low profile SOT-2... |
Description |
20V N-Channel Enhancement Mode MOSFET
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File Size |
164.33K /
3 Page |
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Taiwan Semiconductor Co., Ltd. TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM4405P
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OCR Text |
...), Vgs @ - 1.8V, Ids @ - 4.0A = 90m
S
S
D
G
Patent Pending Description
Bump Side View
TSM4405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimiz... |
Description |
Single P-Channel 1.8V Specified MicroSURF MOSFET
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File Size |
179.75K /
6 Page |
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UTC[Unisonic Technologies]
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Part No. |
US104S
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OCR Text |
...A)
Tj=max: Vto=0.85V 10.0 Rd=90m Tj=Tjmax. 1.0 Tj=25 0.1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated va... |
Description |
SCRs
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File Size |
189.70K /
4 Page |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
VNQ690SPTR-E VNQ690SP-E
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OCR Text |
90m (*)
Figure 1. Package
Iout
10A
VCC
36V
(*) Per each channel
s OUTPUT
CURRENT PER CHANNEL: 10A s CMOS COMPATIBLE INPUTS s OPEN LOAD DETECTION (OFF STATE) s UNDERVOLTAGE & OVERVOLTAGE n SHUT- DOWN s OVERVOLTAGE CLAMP s THE... |
Description |
QUAD CHANNEL HIGH SIDE DRIVER
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File Size |
185.32K /
20 Page |
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VITESSE[Vitesse Semiconductor Corporation]
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Part No. |
VSC7958X VSC7958 VSC7958CC
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OCR Text |
...
1233m x 1705m 305m 100m x 100m 90m x 90m
This device requires external components when used in die form. Please contact your Vitesse sales representative for information.
Page 6
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Pl... |
Description |
2.5Gb/s High Speed Limiting Post Amplifier for OC-48/SDH-16 Applications
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File Size |
66.31K /
8 Page |
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WEITRON[Weitron Technology]
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Part No. |
WT2310
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OCR Text |
... Design For Low RDS(ON) RDS(ON)<90m@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
( Maximum Ratings(TA=25 Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
617.40K /
6 Page |
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WEITRON[Weitron Technology]
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Part No. |
WTD9575
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OCR Text |
...esign For Low RDS(ON) R DS(ON) <90m @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package
Features:
SOURCE
2
4 1 1. GATE 2.4 DRAIN 3. SOURCE 2
3
D-PAK / (TO-252)
Maxim... |
Description |
Surface Mount P-Channel Enhancement Mode POWER MOSFET
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File Size |
398.20K /
6 Page |
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WEITRON[Weitron Technology]
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Part No. |
WTK9435
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OCR Text |
...S(ON)<55m @VGS = -10V * RDS(ON)<90m @VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching
1
Description:
The WTK9435 provide the designer with the best combination of fast switching, ruggedized device design,... |
Description |
Surface Mount P-Channel Enhancement Mode MOSFET
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File Size |
1,390.83K /
6 Page |
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