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  80v 1.25a Datasheet PDF File

For 80v 1.25a Found Datasheets File :: 439    Search Time::5.39ms    
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS50UMJ-3 FS50UMJ-2
OCR Text ... Reverse recovery time VDD = 80v, ID = 25A, VGS = 10V, RGEN = RGS = 50 IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s ...1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE...
Description HIGH-SPEED SWITCHING USE

File Size 39.81K  /  4 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS50UMJ-3
OCR Text ... Reverse recovery time VDD = 80v, ID = 25A, VGS = 10V, RGEN = RGS = 50 IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s ...1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE...
Description Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 44.89K  /  4 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
OCR Text ...AU) CISS COSS CRSS RJC VDS = 80v, VGS = 0V VGS = 20V VGS = 12V, ID = 39A ID = 25A, VGS = 12V Gate to Source Leakage Current Drain t...1.28, VGS = 12V, RGS = 2.35 4-2 FSYA150D, FSYA150R Source to Drain Diode Specifications PARA...
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

File Size 57.05K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFI1310G
OCR Text ...DS = 100V, VGS = 0V A 250 VDS = 80v, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 25A 18 nC VDS = 80v 42 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 25A ns --- RG = 9.1 --- RD = 2.0, See Fig. 10 Between lead, --- 4....
Description Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)

File Size 319.89K  /  8 Page

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    POWER-ONE[Power-One]
Part No. MPB125-4350 MPB125-2003 MPB125-2005 MPB125-2012 MPB125-2015 MPB125-2024 MPB125-2048 MPB125-3000 MPB125-4250
OCR Text ...1% 8 1% 1% 3.20V to 3.40V 11.80v to 12.60V 4.85V to 5.15V 10.80v to 12.60V 11.64V to 12.36V 11.40V to 12.60V 14.54V to 15.45V 11.40V to 12.60V 23.28V to 24.72V 11.40V to 12.60V 46.56V to 49.44V 11.40V to 12.60V 4.85V to 5.25V 11.40V to 1...
Description Multiple-Output AC-DC

File Size 173.97K  /  9 Page

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    MSK[M.S. Kennedy Corporation]
Part No. MSK3014
OCR Text ...e 1 1 1 1 1 1 1 1 1 ID=9.0A VDS=80v VGS=10V VDD=50V ID=9.0A RG=12 RD=5.5 VGS=0V VDS=25V f=1.0MHz ID=-8.4A VDS=-80v VGS=-10V VDD=-50V ID=-8.4A 1 1 1 RG=9.1 RD=6.2 VGS=0V VDS=-25V f=1.0MHz IS=9.0A VGS=0V (Q2,Q3) IS=-8.4A VGS=0V (Q1,Q4) 1 1 IS...
Description H-BRIDGE MOSFET POWER MODULE

File Size 224.46K  /  5 Page

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    MSK[M.S. Kennedy Corporation]
Part No. MSK3020
OCR Text ...= -8.4A (Q1, Q4) ID = 14A VDS = 80v VGS = 10V VDD = 50V ID = 14A RG = 12W RD = 3.5W VGS = 0V VDS = 25V f = 1 MHz VGS = 10V ID = 14A ID = -8.4A VDS = -80v VGS = -10V VDD = -50V ID = -8.4A RG = 9.1W RD = 6.2W VGS = 0V VDS = -25V f = 1 MHz IS ...
Description H-BRIDGE MOSFET POWER MODULE

File Size 236.25K  /  6 Page

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    NTE[NTE Electronics]
Part No. NTE2086 NTE2085
OCR Text ... to 480 watts (1.5A per output, 80v, 26% duty cycle). The NTE2085 is a quad driver intended for use with TTL, low-speed TTL, and 5V MOS logic. The NTE2086 is similar to the NTE2085 except that it is designed for use with PMOS and 12V CMOS l...
Description Integrated Circuit 4-Stage Darlington Array

File Size 21.24K  /  3 Page

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    NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE2088
OCR Text ... to 480 Watts (1.5A per output, 80v, 26% duty cycle). This device has a minimum output breakdown of 50V and a minimum VCE(sus) of 35V measured at 100mA, or a minimum output breakdown of 80v and a minimum VCE(sus) of 50V. A copper-alloy lead...
Description Dual Differential Comparator, Enhanced Voltage 8-TSSOP -40 to 125
Integrated Circuit 4-Segment Darlington Array, w/Pre-Driver Stage for use with PMOS and 12V CMOS

File Size 21.77K  /  3 Page

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    NTE[NTE Electronics]
Part No. NTE2375
OCR Text ...te 4 VDS = 100V, VGS = 0V VDS = 80v, VGS = 0V, TJ = +150C VGS = 20V VGS = -20V ID = 41A, VDS = 80v, VGS = 10V, Note 4 Gate-to-Source Forw...1 TJ = +25C, IS = 41A, VGS = 0V, Note 4 TJ = +25C, IF = 41A, di/dt = 100A/s, Note 4 Test Conditions ...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 28.59K  /  3 Page

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For 80v 1.25a Found Datasheets File :: 439    Search Time::5.39ms    
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