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				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5012 APT5012WVR
OCR Text	....90 (.665) 16.40 (.646) 20.32 (.800) 20.07 (.790) Drain 19.05 (.750) 12.70 (.500) Source Gate 4.20 (.165) BSC 7.40 (.291) 6.60 (.260) 050-5805 Rev A 1.65 (.065) Dia. Typ. 1.40 (.055) 3 Leads 5.00 (.197) BSC Dimensions in Mi...
Description	POWER MOS V 500V 40A 0.120 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.40K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5020BLC APT5020SLC
OCR Text	... Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Gate Drain Source Heat Sink (Drain) and Leads are Plated 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in ...
Description	POWER MOS VI 500V 26A 0.200 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.78K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	... 0 0 100 200 300 400 500 600 V 800 VCE 0.0 0 100 200 300 400 500 600 V 800 VCE 052-6253 Rev A EUROPE Avenue J.F. Kennedy Bat B4 P...2500 TJ = 100C VR = 350V IF, FORWARD CURRENT (AMPERES) 160 TJ = 150C TJ = 100C 80 TJ = 25C TJ...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	...V 8 10 5 4 200 400 600 800 1000 1200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	...V 8 10 5 4 200 400 600 800 1000 1200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60JN
OCR Text	... MIN TYP MAX UNIT 11640 2230 800 475 68 246 22 30 66 13 14000 3120 1200 710 100 370 45 60 100 25 ns nC pF Gate-Source Charge Gate-...2500 70 13 pF in-lbs 1 Repetitive Rating: Pulse width limited by maximum junction temperature....
Description	POWER MOS IV 500V 71A 0.060 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.22K / 4 Page	View it Online	Download Datasheet

				http:// ADPOW[Advanced Power Technology]
Part No.	APT8015JVFR APT8015
OCR Text	... APT8015JVFR UNIT Volts Amps 800 44 176 30 40 700 5.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Curre...2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 P...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 44A 0.150 Ohm
File Size	77.92K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8015 APT8015JVR
OCR Text	...PT8015JVR UNIT Volts Amps 800 44 176 30 40 700 5.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Trans...2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 ...
Description	POWER MOS V 800V 44A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	75.34K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8018JN
OCR Text	...E HIGH VOLTAGE POWER MOSFETS 800 40 160 30 690 5.52 -55 to 150 300 and Inductive Current Clamped Volts Watts W/C C Operating and...2500 70 13 pF in-lbs 1 Repetitive Rating: Pulse width limited by maximum junction temperature....
Description	POWER MOS IV 800V 40A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.06K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2FLL APT8024LFLL
OCR Text	...ive and Non-Repetitive) 1 4 800 Volts Watts W/C C Amps mJ -55 to 150 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.10K / 2 Page	View it Online	Download Datasheet

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