Description |
120000'>8 0000'>megabit (0000'>8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 120000'>8兆位0000'>8米16位).0伏的0000'>cmos只,页面模式同步写闪存与增强VersatileIO控制记忆<br>120000'>8 0000'>megabit (0000'>8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 0000'>8M X 16 FLASH 0000'>3V PROM, 65 ns, PbGA64<br>120000'>8 0000'>megabit (0000'>8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 0000'>8M X 16 FLASH 0000'>3V PROM, 55 ns, PbGA64<br>120000'>8 0000'>megabit (0000'>8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 0000'>8M X 16 FLASH 0000'>3V PROM, 0000'>85 ns, PbGA64<br>120000'>8 0000'>megabit (0000'>8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 0000'>8M X 16 FLASH 0000'>3V PROM, 55 ns, PbGA0000'>80<br>120000'>8 0000'>megabit (0000'>8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 120000'>8兆位米16位).0伏的0000'>cmos只,页面模式同步写闪存与增强VersatileIO控制记忆<br>
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