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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF8N80
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| OCR Text |
...e 1)
FQAF8N80 800 5.9 3.7 23.6 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage ...8mH, IAS = 5.9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.4A, di/dt 200A/s, VDD BVDSS, Sta... |
| Description |
800V N-Channel MOSFET
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| File Size |
687.73K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF9N90 FQA7N90M
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| OCR Text |
... 1)
FQAF9N90 900 5.9 3.73 23.6 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage ...8mH, IAS = 5.9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.6A, di/dt 200A/s, VDD BVDSS, Sta... |
| Description |
900V N-Channel MOSFET
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| File Size |
677.00K /
8 Page |
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http://
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI12N50 FQB12N50 FQB12N50TMAM002
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| OCR Text |
...
FQB12N50 / FQI12N50 500 12.1 7.6 48.4 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/C C C
Gate-Source V...8mH, IAS = 12.1A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 12.1A, di/dt 200A/s, VDD BVDSS, S... |
| Description |
500V N-Channel MOSFET 12.1 A, 500 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET
500V N-Channel QFET
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| File Size |
614.43K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI19N20C FQB19N20C FQB19N20CTM
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| OCR Text |
...--------
15 150 135 115 40.5 6.0 22.5
40 310 280 240 53.0 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximu...8mH, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 19.0A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
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| File Size |
873.32K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQP9P25
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| OCR Text |
...)
FQP9P25 -250 -9.4 -5.9 -37.6 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage ...8mH, IAS = -9.4A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -9.4A, di/dt 300A/s, VDD BVDSS, ... |
| Description |
250V P-Channel MOSFET
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| File Size |
562.27K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF12P20 FQPF12P20YDTU
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| OCR Text |
...te 1)
FQPF12P20 -200 -7.3 -4.6 -29.2 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Vo...8mH, IAS = -7.3A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -11.5A, di/dt 300A/s, VDD BVDSS,... |
| Description |
200V P-Channel MOSFET
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| File Size |
629.72K /
8 Page |
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FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FQPF19N10L
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| OCR Text |
...
(Note 1)
FQPF19N10L 100 13.6 9.6 54.4 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source...8mH, IAS = 13.6A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 19A, di/dt 300A/s, VDD BVDSS, Sta... |
| Description |
100V LOGIC N-Channel MOSFET 13.6 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
613.83K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF19N10
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| OCR Text |
...d
(Note 1)
FQPF19N10 100 13.6 9.6 54.4 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source...8mH, IAS = 13.6A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 19A, di/dt 300A/s, VDD BVDSS, Sta... |
| Description |
100V N-Channel MOSFET
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| File Size |
581.31K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF19N20C FQP19N20C FQP19N20CTSTU
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| OCR Text |
...--------
15 150 135 115 40.5 6.0 22.5
40 310 280 240 53.0 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximu...8mH, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 19.0A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
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| File Size |
1,141.02K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF5P10
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| OCR Text |
...-10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximu...8mH, IAS = -2.9A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -4.5A, di/dt 300A/s, VDD BVDSS, ... |
| Description |
100V P-Channel MOSFET
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| File Size |
658.67K /
8 Page |
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it Online |
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