| |
|
 |
SIEMENS AG
|
| Part No. |
SKA06N60
|
| OCR Text |
...g energy e ts t j =25 c, v cc =400v, i c =6a, v ge =0/15v, r g =50 ? , energy losses include ? tail ? and diode reverse recovery. - 0.215 ...20a 30a t c =110 c t c =80 c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a t p =2 s 15 ... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
|
| File Size |
235.00K /
13 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Vishay Semiconductors
IRF[International Rectifier]
|
| Part No. |
20MT120UF 20MT120UFPBF
|
| OCR Text |
...vs. IC TJ = 150C; L=1.4mH; VCE= 400v RG= 5; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=1.4mH; VCE= 400v RG= 100; VGE= 15V...20a
30
25
Q RR (C)
IRR (A)
1.5
20
10A
15
10
0
200
400
600
... |
| Description |
40 A, 1200 V, N-CHANNEL IGBT MTP, 18 PIN
UltraFast NPT IGBT
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package
|
| File Size |
694.93K /
13 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor Corporation
|
| Part No. |
FDP20N50F
|
| OCR Text |
...v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...20a v gs = 10v (note 4, 5) -5065nc... |
| Description |
N-Channel MOSFET, FRFET 500V, 20a, 0.26
|
| File Size |
775.99K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APT40N60LCF APT40N60LCFG APT40N60B2CFG APT40N60B2CF
|
| OCR Text |
...INDUCTIVE SWITCHING @ 25C VDD = 400v, VGS = 15V ID = 40A, RG = 5 INDUCTIVE SWITCHING @ 125C VDD = 400v, VGS = 15V ID = 40A, RG = 5
6
J...20a
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (AMPER... |
| Description |
Super Junction FREDFET 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
| File Size |
309.47K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
