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400v 12a Datasheet PDF File

For 400v 12a Found Datasheets File :: 803 Search Time::1.25ms
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				International Rectifier
Part No.	IRG4IBC30UDPBF
OCR Text	...ditions 75 IC = 12a 12 nC VCC = 400v See Fig. 8 27 VGE = 15V --- TJ = 25C --- ns IC = 12a, VCC = 480V 140 VGE = 15V, RG = 23 130 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 0.9 --- TJ = 150C, S...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	315.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4IBC30KDPBF
OCR Text	... 67 100 IC = 16A 11 16 nC VCC = 400v See Fig.8 25 37 VGE = 15V 60 42 TJ = 25C ns 160 250 IC = 16A, VCC = 480V 80 120 VGE = 15V, RG = 23 0....12a 3.5 6.0 A TJ = 25C See Fig. 5.6 10 TJ = 125C 15 VR = 200V 80 180 nC TJ = 25C See Fig. 220 600 TJ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	341.48K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRG4BC30KD IRG4BC30KDPBF
OCR Text	... 67 100 IC = 16A 11 16 nC VCC = 400v See Fig.8 25 37 VGE = 15V 60 -- 42 -- TJ = 25C ns 160 250 IC = 16A, VCC = 480V 80 120 VGE = 15V, RG = 2...12a 3.5 6.0 A TJ = 25C See Fig. 5.6 10 TJ = 125C 15 VR = 200V 80 180 nC TJ = 25C See Fig. 220 600 TJ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 2.21V，@和VGE \u003d 15V的，集成电路\u003d 16A条） 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
File Size	192.51K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STP12IE95F4 P12IE95F4
OCR Text	...s) Test Conditions VCC =VClamp =400v IC = 6A VGS =10V IB = 1.2A RG =47 tpeak =500ns IBpeak = 6A (IC ) Min. Typ. Max. Unit VCS(dyn) 3.37 V VCS(dyn) Collector-source dynamic voltage (1s) VCC =VClamp =400v IC = 6A VGS =10V IB...
Description	Emitter Switched Bipolar Transistor ESBT 950 V - 12a - 0.083 ohm 发射极开关双极晶体管内酰胺酶9502A - 0.083欧姆
File Size	249.97K / 11 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	AOB12T60P
OCR Text	400v 4.4 m j applications 100% uis tested 100% r g tested package type ? trench power alphamos-ii technology ? low r ds(on) ? low ciss...12a total gate charge gate source charge switching parameters i d =250a, v gs =0v, t j =150c breakdo...
Description	Trench Power AlphaMOS-II technology
File Size	1,081.98K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFN450 JANTXV2N7228U JANTX2N7228U MIL-PRF-19500_592
OCR Text	...50A VDS > 15V, IDS = 8.0A VDS= 400v ,VGS=0V VDS = 400v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 12a VDS =250V VDD = 250V, ID = 12a, VGS =10V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss...
Description	500V Single N-Channel Hi-Rel MOSFET in a SMD-1 package POWER MOSFET SURFACE MOUNT(SMD-1)
File Size	180.94K / 7 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC4109
OCR Text	400v/16A Switching Regulator Applications Features * High breakdown voltage and high reliability. * Fast switching speed. * Wide ASO. * Ad...12a, IB1=2.4A, IB2=-4.8A, RL=16.6, VCC=200V tstg IC=12a, IB1=2.4A, IB2=-4.8A, RL=16.6, VCC=200V tf I...
Description	NPN Triple Diffused Planar Silicon Transistor 400v/16A Switching Regulator Applications
File Size	94.57K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STC12IE90HV C12IE90HV
OCR Text	...s) Test Conditions VCC =VClamp =400v IC = 6A VGS =10V IB = 1.2A RG =47 tpeak =500ns IBpeak = 6A (IC ) Min. Typ. Max. Unit VCS(dyn) 3.37 V VCS(dyn) Collector-source dynamic voltage (1s) VCC =VClamp =400v IC = 6A VGS =10V IB...
Description	Emitter Switched Bipolar Transistor ESBT 900 V - 12a - 0.083 ohm
File Size	220.01K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	MIL-PRF-19500/592
OCR Text	...50A VDS > 15V, IDS = 8.0A VDS= 400v ,VGS=0V VDS = 400v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 12a VDS =250V VDD = 250V, ID = 12a, VGS =10V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss...
Description	POWER MOSFET SURFACE MOUNT(SMD-1)
File Size	181.36K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	RFH12N40 RFH12N35
OCR Text	400v, 0.380 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for appl...12a, 350V and 400v * rDS(ON) = 0.380 * Related Literature - TB334 "Guidelines for Soldering Surface ...
Description	12a, 350V and 400v, 0.380 Ohm, N-Channel Power MOSFETs 12 A, 350 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC 12a/ 350V and 400v/ 0.380 Ohm/ N-Channel Power MOSFETs
File Size	39.96K / 5 Page	View it Online	Download Datasheet

For 400v 12a Found Datasheets File :: 803 Search Time::1.25ms
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