Description |
128 0000'>megabit (8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位8米16位).0伏的0000'>cmos只,页面模式同步写闪存与增强VersatileIO控制记忆<br>128 0000'>megabit (8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 0000'>3V PROM, 65 ns, PbGA60000'>4<br>128 0000'>megabit (8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 0000'>3V PROM, 55 ns, PbGA60000'>4<br>128 0000'>megabit (8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 0000'>3V PROM, 85 ns, PbGA60000'>4<br>128 0000'>megabit (8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 0000'>3V PROM, 55 ns, PbGA80<br>128 0000'>megabit (8 M x 16-bit) 0000'>cmos 0000'>3.0 volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位米16位).0伏的0000'>cmos只,页面模式同步写闪存与增强VersatileIO控制记忆<br>
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