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  3625 Datasheet PDF File

For 3625 Found Datasheets File :: 123948    Search Time::2.406ms    
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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...S = 200V 8 4 0 0 12 24 36 48 60 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 IRF244, IRF245, IRF246, IRF247 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK I...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ... 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2.92 (.115) 2.64 (.104) 3 O U T LIN E C O N F...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text 36 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES * High performance ferrite core is used in this epoxy conforma...25 25 25 25 25 25 25 25 25 25 25 45 45 50 50 55 55 60 65 65 70 70 75 70 70 70 70 65 40 55 55 50 45 4...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...0.93 (.03 7) 3X 0.69 (.02 7) 0 .36 (.014 ) M BAM 3X 0.55 (.0 22) 0.46 (.0 18) 2.9 2 (.115) 2.6 4 (.104) 2X N OT ES : 1 D IME N S...25, I AS = 76A. ISD 76A, di/dt 100A/s, VDD V(BR)DSS, TJ 175C Calculated continuous curr...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ... 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSI...25 (.049) 10.90 J = 10.70 (.421) RG = 25, IAS = 30A. 16.10 (.634) 15.90 (.626) 1.75 (.069) 15.42...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...--- --- --- --- --- --- --- --- 36 47 75 A 890 1.3 54 71 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diod...25 50 75 100 125 150 175 TC , Case Temperature (C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 10...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text ....43 (0.135) 6.35 (0.25) 9.15 (0.36) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ... 56 + 20 _ 261 14 5.5 6.5 55 0.36 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operating Junction and Storage Temperature Ran...25 C unless otherwise specified) Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss ...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...YP. MAX. UNIT 3 80 11 10 0.05 6 36 18 12 3.5 4.5 7.5 633 103 61 4 6 110 275 100 10 250 40 5.6 19 V V V V V m m S nA A A nC nC nC ns ns ns ns...25 V; f = 1 MHz REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise spec...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...urn-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25...25 30 Reverse Voltage - VR (V) 1 Fig. 13 - Typical Values of Reverse Current Vs. Reverse Vo...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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