|
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
HGTG12N60C3D
|
OCR Text |
...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES... |
Description |
From old datasheet system 24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
|
File Size |
123.26K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
HARRIS[Harris Corporation]
|
Part No. |
HGTD3N60C3S HGTD3N60C3
|
OCR Text |
...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 82. 6 3 24 20 30 18A at 480V 33 0.27 100 -40 to 150 260 8 W W/oC mJ
oC oC
UNITS V A A A V V
600
s
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Speci... |
Description |
6A, 600V, UFS Series N-Channel IGBTs
|
File Size |
227.56K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
HGT1Y40N60B3D
|
OCR Text |
...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, R G = 3.
S
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150o... |
Description |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
File Size |
122.85K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Hi-Sincerity Mocroelectronics Corp. HSMC[Hi-Sincerity Mocroelectronics]
|
Part No. |
H01N45A
|
OCR Text |
...e Charge Gate-Drain Charge (VDS=360V, ID=0.5A, VGS=10V, RG=4.7) (VDD=225V, ID=0.5A, RG=4.7, VGS=10V) 6.7 4 14 2 3.2 20 nC ns
Switching Off tr(Voff) tf tC Off-Voltage Rise Time Fall Time Cross-Over Time (VDD=360V, ID=1.5A, RG=4.7, VGS=10V... |
Description |
N-channel High Voltage MOSFET N-Channel Power Field Effect Transistor
|
File Size |
42.87K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |

FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
Part No. |
HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
|
OCR Text |
...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VG... |
Description |
45 A, 600 V, UFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT
|
File Size |
141.01K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|