|
|
 |
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] POWEREX[Powerex Power Semiconductors]
|
Part No. |
CT40TMH-8
|
OCR Text |
... VGE = 28V
MAXIMUM CONDITION 350v 200A 1500F
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (... |
Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
File Size |
31.42K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
NTE Electronics, Inc. NTE[NTE Electronics]
|
Part No. |
NTE2430
|
OCR Text |
.... . . . . . . . . . . . . . . . 350v Emitter-Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . .... |
Description |
Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)
|
File Size |
18.57K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
NTE[NTE Electronics]
|
Part No. |
NTE38 NTE175
|
OCR Text |
...ing Voltage: NTE38: VCEO(sus) = 350v @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 8...400v NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
Description |
Silicon Complementary Transistors High Voltage, Medium Power Switch
|
File Size |
28.25K /
3 Page |
View
it Online |
Download Datasheet
|
|
|
 |
NTE[NTE Electronics]
|
Part No. |
NTE5531 NTE5520
|
OCR Text |
.... . . . . . . . . . . . . . . . 350v NTE5526 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400v NTE5527 . . . . . . . . . . . . . . . . . . . . . . . . ... |
Description |
Silicon Controlled Rectifier (SCR) / 25A Silicon Controlled Rectifier (SCR), 25A
|
File Size |
18.28K /
2 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|