| |
|
 |
Advanced Power Technology, Ltd.
|
| Part No. |
APTGF150X60TE3G
|
| OCR Text |
...0 v 8 q2 5 6 u q1 w 1 p+ 2 n- 4 3 q3 q4 7 15 16 17 13 14 8 7911 10 18 19 56 34 1 21 20 12 2 v ces = 600v i c = 150a @ tc = 80c applicatio n ? ac motor control features ? non punch through (npt) fast i... |
| Description |
3 Phase bridge NPT IGBT Power Module 3相桥不扩散核武器条约IGBT功率模块
|
| File Size |
293.62K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Powerex, Inc.
|
| Part No. |
CM150DUS-12F
|
| OCR Text |
... e2 g2 g1 e1 p - nuts x z deep (3 places) t c measured point c l c2e1 rtc rtc e2 e1 g1 c1 e2 g2 1 description: powerex igbtmod? modules ar...150a, v ge = 15v, t j = 25c 1.7 2.0 2.7 volts i c = 150a, v ge = 15v, t j = 125c C ... |
| Description |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
| File Size |
140.03K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor, Corp.
|
| Part No. |
SGU20N40L
|
| OCR Text |
...esistance, junction-to-case -- 3.0 c / w r ja (d-pak) thermal resistance, junction-to-ambient (pcb mount) (2) -- 50 c / w r ja (i-pa...150a , v ge = 4.5v 2.0 4.5 8.0 v dynamic characteristics c ies input capacitance v ge = 0v , v ce ... |
| Description |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
| File Size |
190.85K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor, Corp.
|
| Part No. |
SGU20N40LTU
|
| OCR Text |
...esistance, junction-to-case -- 3.0 c / w r ja (d-pak) thermal resistance, junction-to-ambient (pcb mount) (2) -- 50 c / w r ja (i-pa...150a, v ge = 4.5v 2.0 4.5 8.0 v dynamic characteristics c ies input capacitance v ge = 0v, v ce =... |
| Description |
400 V, N-CHANNEL IGBT, TO-251 IPAK-3
|
| File Size |
207.14K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
150EBU02
|
| OCR Text |
...body
0.99 1.13 0.79 0.90 180 3.5 50 2 -
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
...150A VR = 160V diF /dt = 200A/s
IRRM
Peak Recovery Current
-
A
TJ = 25C TJ = 125C
... |
| Description |
200V 150A Ultra-Fast Discrete Diode in a PowIRtab package
Ultrafast Soft Recovery Diode
|
| File Size |
143.92K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
