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				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text	...3 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS DQ7 DQ6 DQ5 DQ4 VSS CAS OE A12(N.C)* A11 A10 A9 A8 A7 A6 VSS VCC DQ0 DQ1 DQ2 ...COL. ADDR COL. ADDR tCRP CAS VIH VIL - tASR A VIH VIL ROW ADDR tASC tCAH tCAH ...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
File Size	415.47K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
OCR Text	...3 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS DQ7 DQ6 DQ5 DQ4 VSS CAS OE A12(N.C)* A11 A10 A9 A8 A7 A6 VSS VCC DQ0 DQ1 DQ2 ...COL. ADDR COL. ADDR tCRP CAS VIH VIL - tASR A VIH VIL ROW ADDR tASC tCAH tCAH ...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
File Size	415.01K / 21 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H510438C-LA2 K4H510438C-LB0 K4H510438C-LB3 K4H510438C-LCC K4H510438C-UC K4H510838C-UC
OCR Text	...4 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 VSS NC VSSQ NC DQ3 VDDQ NC NC VSSQ NC DQ2 VDDQ NC NC V...Col. Buffer Latency & Burst Length Strobe Gen. DLL Data Strobe Programming Register LCKE LRAS ...
Description	512Mb C-die DDR SDRAM Specification
File Size	209.84K / 23 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4H510438
OCR Text	...4 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 VSS NC VSSQ NC DQ3 VDDQ NC NC VSSQ NC DQ2 VDDQ NC NC V...Col. Buffer Latency & Burst Length Strobe Gen. DLL Data Strobe LCKE Programming Register LR...
Description	512Mb B-die DDR SDRAM Specification
File Size	328.94K / 23 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80
OCR Text	...4 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14...col. address delay Last data in to burst stop Col. address to col. address delay Number of valid out...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	125.82K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text	...4 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14...col. address delay Last data in to burst stop Col. address to col. address delay Number of valid out...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
File Size	130.19K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC/L75 K4S561632D-TC/L7C K4S561632D-TC75000
OCR Text	...4 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 V SS DQ15 V SSQ DQ...col. address delay Last data in to burst stop Col. address to col. address delay Number of valid out...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	59.61K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75
OCR Text	...ICC3P ICC3PS ICC3N mA 10 6 6 25 mA mA Active Standby Current in non power-down mode (One Bank Active) ICC3NS 25 mA Oper...col. address delay Last data in to burst stop Col. address to col. address delay Symbol - 75 tRRD (m...
Description	From old datasheet system IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC 16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP
File Size	58.25K / 8 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1H K4S561633F-F1L K4S561633F-F75 K4S561633F-G K4S561633F-L K4S561633F-N K4S561633F-X K4S561633F-XE
OCR Text	...e referenced to VSS = 0V, TA = -25 to 85C for Extended, -25 to 70C for Commercial) Parameter Supply voltage VDDQ Input logic high voltage In...col. address delay Last data in to burst stop Col. address to col. address delay Number of valid out...
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
File Size	111.69K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S56163LC K4S56163LC-RF
OCR Text	...Power, Operating Temperature ; -25 C~85 C. Notes : 1. In case of 40MHz Frequency, CL1 can be supported. 2. In case of 33MHz Frequency, CL1 c...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Registe...
Description	16Mx16 Mobile SDRAM 54CSP CAP 680UF 50V ELECT FM RADIAL
File Size	59.21K / 8 Page	View it Online	Download Datasheet

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