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For 2.6m Found Datasheets File :: 245 Search Time::1.141ms
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				International Rectifier
Part No.	IRF7420PBF
OCR Text	...m@VGS = -4.5V 17.5m@VGS = -2.5V 26m@VGS = -1.8V ID -11.5A -9.8A -8.1A Description These P-Channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance...
Description	HEXFET Power MOSFET
File Size	170.22K / 9 Page	View it Online	Download Datasheet

				ELM Technology Corporation
Part No.	ELM13416CA-S1
OCR Text	...) < 22m (vgs=4.5v) ? rds(on) < 26m (vgs=2.5v) ? rds(on) < 34m (vgs=1.8v) ? esd protected pin configuration circuit sot-23(top view) pin no. pin name 1 gate 2 source 3 drain 1 2 3 5 - single n-channel mosfet g d s 2 elm13416ca-s electr...
Description	Single N-channel MOSFET
File Size	576.73K / 5 Page	View it Online	Download Datasheet

				Alpha Industries
Part No.	AO4406
OCR Text	... < 16.5m (VGS = 4.5V) RDS(ON) < 26m (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed...
Description	N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	166.40K / 7 Page	View it Online	Download Datasheet

				Sumida Corporation
Part No.	CDRH105R
OCR Text	...2.3m( 9.5m) 18m( 14m) 20m( 16m) 26m( 20m) 33m( 25m) 41m( 32m) 46m( 35m) 61m( 47m) 69m( 53m) 84m( 65m) 106m( 82m) 130m(100m) 149m(115m) 201m(155m) 227m(175m) 253m(195m) 303m(233m) 370m(285m) 419m(322m) 500m(385m) 672m(512m) 812m(625m) 953m(7...
Description	POWER INDUCTORS (SMD Type)
File Size	212.92K / 1 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMP1022UFDE DMP1022UFDE-7
OCR Text	...1.5m ? @ v gs = -2.5v -7.9a 26m ? @ v gs = -1.8v -7.0a 32m ? @ v gs = -1.5v -6.3a description this mosfet has been designed specifically for use in battery management applications. features ? 0.6mm profile ? ideal fo...
Description	12V P-CHANNEL ENHANCEMENT MODE MOSFET
File Size	202.44K / 7 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semiconductor Co., Ltd
Part No.	NCE0128D
OCR Text	... = 100v,i d =28a r ds(on) < 26m ? @ v gs =10v typ 13.3 m ? special process technology for high esd capability high density cell design for ultra low rdson fully characterized avalanche voltage and current good stabi...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	284.36K / 7 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semiconductor Co., Ltd
Part No.	NCE0128
OCR Text	... = 100v,i d =28a r ds(on) < 26m ? @ v gs =10v typ 13.3 m ? special process technology for high esd capability high density cell design for ultra low rdson fully characterized avalanche voltage and current good stabi...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	311.21K / 7 Page	View it Online	Download Datasheet

				Silikron Semiconductor Co.,LTD.
Part No.	SSF2318E
OCR Text	...34m ? @ v gs =1.8v r ds(on) < 26m ? @ v gs =2.5v r ds(on) < 22m ? @ v gs =4.5v esd rating 2500v hbm high power and current handing capability lead free product is acquired surface mount package application battery p...
Description	Battery protection
File Size	253.72K / 5 Page	View it Online	Download Datasheet

				Rohm
Part No.	RSD221N06
OCR Text	...-63) <sot-428> r ds(on) (max.) 26m w i d 22a p d 20w * 1 esd protection diode * 2 body diode (1) gate (2) drain (3) source (1) (2) (3) (1) (3) (2) * 1 * 2 1/12 2012.08 - rev.a dat asheet www.rohm.com ?...
Description	Nch 60V 22A Power MOSFET
File Size	486.04K / 13 Page	View it Online	Download Datasheet

For 2.6m Found Datasheets File :: 245 Search Time::1.141ms
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