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  16.06 Datasheet PDF File

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    2SC4050

HITACHI[Hitachi Semiconductor]
Part No. 2SC4050
OCR Text ...al Output Characteristics 10 18 16 14 6 12 10 4 8 6 2 4 2 A IB = 0 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 100 50 0 ...06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + ...
Description Silicon NPN Epitaxial

File Size 29.13K  /  6 Page

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    2SC5216

Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5216
OCR Text ... 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.1 0.4 -0.05 +0.1 High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9...
Description Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236

File Size 34.44K  /  2 Page

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    2SJ163

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ163
OCR Text ...o 0.1 0.1 to 0.3 0.40.2 0.16 -0.06 +0.1 1 Silicon Junction FETs (Small Signal) PD Ta 200 -4.0 Ta=25C 175 -3.5 -2.5 2SJ163 ID VDS -3.0 VDS=-10V ID VGS Allowable power dissipation PD (mW) Drain current ID (mA...
Description Silicon P-Channel Junction FET

File Size 30.72K  /  2 Page

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    2SJ217

NEC
Hitachi Semiconductor
Part No. 2SJ217
OCR Text ...t d(on) tr t d(off) tf VDF t rr 16 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.033 0.045 25 3800 2000 490 30 235 670 450 -1.35 300 Max -- -- 10 -250 -2.0 0.042 0.06 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = -45 A, ...
Description Silicon P-Channel MOS FET

File Size 48.19K  /  9 Page

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    2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00

NEC[NEC]
Part No. 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00
OCR Text ...ulse) PW 10 ms Duty cycle 1 % 16 cm2 x 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING -30 -20/+10 2.0 4.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 -55...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)

File Size 64.46K  /  6 Page

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    2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00

NEC[NEC]
Part No. 2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00
OCR Text ...ulse) PW 10 ms Duty cycle 1 % 16 cm2 x 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING -60 -20/+10 2.0 4.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.5 0.1 2....
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOSFET

File Size 65.63K  /  6 Page

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    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text ... = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10 A, VDS = -5 V I D = -20 mA VGS = -4 V*1 I D = -10 mA VGS = -10 ...06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + ...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text ...= 0 I G = 100 A, VDS = 0 VDS = -16 V, VGS = 0 VGS = 16 V, VDS = 0 I D = -10 A, VDS = -5 V I D = -100 mA VGS = -4 V*1 I D = -40 mA VGS = -2.5...06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + ...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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    2SJ452

HITACHI[Hitachi Semiconductor]
Part No. 2SJ452
OCR Text ... = 0 VDS = -40 V, VGS = 0 VGS = 16 V, VDS = 0 I D = -10 A, VDS = -5 V I D = -100 mA VGS = -4 V*1 I D = -40 mA VGS = -2.5 V*1 I D = -100 mA*1...06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + ...
Description    Silicon P-Channel MOS FET

File Size 39.33K  /  8 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ....02 -10 V 0 -8 -4 -12 -16 -20 Gate to Source Voltage VGS (V) 0.01 -1 -2 -5 -10 -20 Drain Current I D (A) -50 Foward ...06 -5, -10 A 0.04 -5, -10, -20 A -10 V Pulse Test 0 40 80 120 Cate Temperature Tc (C) 160 0.02...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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