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IXYS, Corp.
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Part No. |
IXGK50N60C2D1
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OCR Text |
...m ittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g e - volts i c - amperes t j = 125oc 25oc ixgk 50n60c2d1 ixgx 50n60c2d1
ixys reserves the right to change limits, test conditions, and ... |
Description |
HiPerFAST IGBT with Diode 75 A, 600 V, N-CHANNEL IGBT, TO-264AA
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File Size |
624.54K /
6 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
BUK9528-55
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OCR Text |
... = t p /t 0 20 40 60 80 100 120 140 160 180 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1 10 100 1 10 100 1000 id/a vds/v rds(on) = vds/id tp = 1 us 10us 100 us 1 ms 10ms 100ms dc 0 20 40 60... |
Description |
TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)
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File Size |
64.70K /
8 Page |
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it Online |
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Vishay Semiconductors International Rectifier
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Part No. |
150U60D 150U060 150U060D 150U080 150U080D 150U100 150U100D 150U80D 150UR80D 150UR080D 150UR60D 150U120 150U120D 150U120DL 150UR100D 150UR120D
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OCR Text |
...Case Temperature (C)
180 160 140 120 100 80 0 50
150U(R) RthJC (DC) = 0.3 K/W
180 160 140 120 100 80 0 40
150U(R) RthJC (DC) = 0.3 K/W
Conduction Angle
Conduction Period
30
60 90 120
DC
180 30 60 90 120
180
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Description |
150 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA DIODE 150 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AA, HERMETIC SEALED, METAL, DO-8, 1 PIN, Rectifier Diode DIODE 150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA, HERMETIC SEALED, METAL, DO-8, 1 PIN, Rectifier Diode 1200V 150A Std. Recovery Diode in a DO-205AA (DO-8)package 1000V 150A Std. Recovery Diode in a DO-205AA (DO-8)package 800V 150A Std. Recovery Diode in a DO-205AA (DO-8)package 600V 150A Std. Recovery Diode in a DO-205AA (DO-8)package
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File Size |
85.86K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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