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  1.2mh Datasheet PDF File

For 1.2mh Found Datasheets File :: 770    Search Time::2.422ms    
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    IRF5YB9540CM

International Rectifier
Part No. IRF5YB9540CM
OCR Text ....5 4.4 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com ...2mH Peak IAS = -11A, RG= 25 ISD -11A, di/dt -350 A/s, Pulse width 400 s; Duty Cycle 2% VDD...
Description
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    ETC[ETC]
Part No. S175-50
OCR Text 1.5 - 30 MHz GENERAL DESCRIPTION The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequ...2mH, Molded Inductor R1,R2=22W, 2 Watts R3,R6=220W, 2 Watts R4,R5=10W, 1/4 Watt August 1996 TRAN...
Description 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz
175 Watts 50 Volts Class AB Milcom 1.5 - 30 MHz

File Size 388.71K  /  3 Page

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    SANYO
Part No. 2SC4426
OCR Text ...SC4426] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Ma...2mH, Clamped ton IC=2A, IB1=0.4A, IB2=-0.8A, RL=200, VCC=400V tstg tf IC=2A, IC=2A, IB1=0.4A, IB1=0....
Description NPN Triple Diffused Planar Silicon Transistor 800V/3A Switching Regulator Applications

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    Sanken
Part No. STA521A
OCR Text ...) RDS(ON) Ciss Coss Crss td(on) 1.0 4.0 7.0 280 320 420 210 90 16 60 100 70 1.0 1.5 350 480 Specification min typ max 200 100 100 2.0 Unit V...2mH, IL=7A, unclamped, RG=50, see Fig. E on page 15. sEquivalent circuit diagram 3 5 7 9 tr t...
Description S-shape Correction Switch For CRT Display

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    17224 17823

C&D Technologies
Part No. 17224 17823
OCR Text 1700 SERIES Radial Lead Inductors SELECTION GUIDE Inductance DC Resistance DC Current Continuous Nominal Q at f kHz Nominal Self Resonant...2mH 17153 17223 FEATURES s Radial Format s Up to 1.8A IDC s 10H to 2.2mH s Low DC Resistanc...
Description Radial Lead Inductors

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    HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12
OCR Text ... Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter...2mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 11A VCE = 960V VGE = ...
Description 43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT

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    HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A
OCR Text ...,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures....2mH, VCE(PK) = 1200V IC = 1.0A, VCE = 0.5 BVCES IC = 1.0A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Cu...
Description 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N沟道绝缘栅双极型晶体管(带反并行超快速二极管 5.3 A, 1200 V, N-CHANNEL IGBT, TO-263AB
5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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    FQB22P10 FQI22P10 FQB22P10TM

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FQB22P10 FQI22P10 FQB22P10TM
OCR Text ...) Drain Current - Pulsed (Note 1) FQB22P10 / FQI22P10 -100 -22 -15.6 -88 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A...2mH, IAS = -22A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -22A, di/dt 300A/s, VDD BVDSS, St...
Description 100V P-Channel QFET
100V P-Channel MOSFET

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    Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. IRFR130 IRFR130A IRFU130A IRFR130ATF IRFR130ATM IRFU130ATU IRFR/U130A IRFRU130A IRFU130
OCR Text ...on) = 0.11 ID = 13 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS E...2mH, I AS=13A, VDD=25V, RG=27 , Starting T J =25 oCo 3 _ _ _ O ISD < 14A, di/dt < 350A/ s, VDD< BVDS...
Description    Avalanche Rugged Technology
N-CHANNEL POWER MOSFET
100V N-Channel A-FET
Advanced Power MOSFET 先进的功率MOSFET
(IRFR130A / IRFU130A) Advanced Power MOSFET

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    LF2115-103 LF2115-223 LF2115-392 LF1290-681 LF1290-682 LF1290-471 LF1290-472 LF1290-102 LF1290-103 LF1290 LF1290-222 LF1

SUMIDA[Sumida Corporation]
Part No. LF2115-103 LF2115-223 LF2115-392 LF1290-681 LF1290-682 LF1290-471 LF1290-472 LF1290-102 LF1290-103 LF1290 LF1290-222 LF1290-392 LF2115 LF2115-183 LF2115-222 LF2115-333 LF2020-392 LF2020 LF2020-103 LF2020-183 LF2020-222 LF2020-223 LF2020-333
OCR Text 1. Common mode chokes for effective AC line noise prevention LF1290 17.0MAX. 13.0MAX. DIMENSIONS (mm) K Impedance Characteristics ...2mH Min.3.9mH Min.4.7mH Min.6.8mH Min.10.0mH Max.50H Max.50H Max.150H Max.150H Max.200H Max.300H Max...
Description AC COMMON MODE CHOKES

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