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ETC[ETC]
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Part No. |
S175-50
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OCR Text |
1.5 - 30 MHz GENERAL DESCRIPTION
The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequ...2mH, Molded Inductor R1,R2=22W, 2 Watts R3,R6=220W, 2 Watts R4,R5=10W, 1/4 Watt
August 1996
TRAN... |
Description |
175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz 175 Watts 50 Volts Class AB Milcom 1.5 - 30 MHz
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File Size |
388.71K /
3 Page |
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SANYO
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Part No. |
2SC4426
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OCR Text |
...SC4426]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
1
2
3 3.5
Specifications
Absolute Ma...2mH, Clamped ton IC=2A, IB1=0.4A, IB2=-0.8A, RL=200, VCC=400V tstg tf IC=2A, IC=2A, IB1=0.4A, IB1=0.... |
Description |
NPN Triple Diffused Planar Silicon Transistor 800V/3A Switching Regulator Applications
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File Size |
110.23K /
5 Page |
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Sanken
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Part No. |
STA521A
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OCR Text |
...) RDS(ON) Ciss Coss Crss td(on) 1.0 4.0 7.0 280 320 420 210 90 16 60 100 70 1.0 1.5 350 480 Specification min typ max 200 100 100 2.0 Unit V...2mH, IL=7A, unclamped, RG=50, see Fig. E on page 15.
sEquivalent circuit diagram
3 5 7 9
tr t... |
Description |
S-shape Correction Switch For CRT Display
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File Size |
11.95K /
1 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A
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OCR Text |
...,644,637 4,801,986 4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures....2mH, VCE(PK) = 1200V IC = 1.0A, VCE = 0.5 BVCES IC = 1.0A, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Cu... |
Description |
5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N沟道绝缘栅双极型晶体管(带反并行超快速二极管 5.3 A, 1200 V, N-CHANNEL IGBT, TO-263AB 5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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File Size |
74.80K /
7 Page |
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it Online |
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
IRFR130 IRFR130A IRFU130A IRFR130ATF IRFR130ATM IRFU130ATU IRFR/U130A IRFRU130A IRFU130
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OCR Text |
...on) = 0.11 ID = 13 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS E...2mH, I AS=13A, VDD=25V, RG=27 , Starting T J =25 oCo 3 _ _ _ O ISD < 14A, di/dt < 350A/ s, VDD< BVDS... |
Description |
Avalanche Rugged Technology N-CHANNEL POWER MOSFET 100V N-Channel A-FET Advanced Power MOSFET 先进的功率MOSFET (IRFR130A / IRFU130A) Advanced Power MOSFET
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File Size |
259.55K /
7 Page |
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it Online |
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Price and Availability
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