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0.18a Datasheet PDF File

For 0.18a Found Datasheets File :: 3138 Search Time::7.656ms
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				IRF[International Rectifier]
Part No.	IRG4PF50WD
OCR Text	...04 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V W C Thermal Resistance Parameter ...18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	246.57K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLZ24N IRLZ24NPBF
OCR Text	... Rated D G S RDS(on) = 0.06 ID = 18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	174.80K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HUF75339S3S HUF75339P3 HUF75339G3 FN4363
OCR Text	0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM process. This ad...18A 40 50 60 Qg, GATE CHARGE (nC) NOTE: Refer to Intersil Application Notes AN7254 and AN7260....
Description	75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.012 Ω, N沟道UltraFET功率MOS场效应管) 75A 55V 0.012 Ohm N-Channel UltraFET Power MOSFETs From old datasheet system
File Size	107.67K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2213S
OCR Text	... PDIP) (16 Lead SOIC) Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 VCC - 25 VSS - 0.3 -- -- -- -- -- -- -55 -- Max. 1225 VB + 0.3 VB + ...18A. VCC Supply Current vs. Temperature Figure 18B. VCC Supply Current vs. Voltage 8 www.ir...
Description	HIGH POWER RECTIFIER DIODES
File Size	134.59K / 11 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRFP240 FN2087
OCR Text	0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de...18A, RGS = 9.1, VGS = 10V, RL = 5.4 MOSFET Switching Times are Essentially Independent of Operating ...
Description	From old datasheet system 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
File Size	56.15K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRFP9140 FN2292
OCR Text	0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energ...18A, dISD/dt = 100A/s TJ = 25oC, ISD = -18A, dISD/dt = 100A/s - 210 2.0 -1.5 - V ns C ...
Description	From old datasheet system 19A 100V 0.200 Ohm P-Channel Power MOSFET 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET
File Size	59.13K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR
OCR Text	...8 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case ) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt ...18A VGE = 15V 1.84 -- IC = 34A See Fig. 2, 5 V 1.45 -- IC = 18A , TJ = 150C -- 6.0 VCE = VGE, IC = 2...
Description	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 18A I(C) \| TO-263AB 晶体管\| IGBT的\|正陈\| 600V的五（巴西）国际消费电子展\| 18A条一（c）\|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条） INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
File Size	150.68K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRG4BC30S
OCR Text	... 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Paramet...18A VGE = 15V Collector-to-Emitter Saturation Voltage -- 1.84 -- IC = 34A See Fig.2, 5 V -- 1.45 -- ...
Description	600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
File Size	158.52K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4PH40UD IRG4PH40UD-E
OCR Text	...ew. Max. 1200 41 21 82 82 8.0 130 20 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V W ...18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf ...
Description	41 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条） INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
File Size	217.13K / 10 Page	View it Online	Download Datasheet

For 0.18a Found Datasheets File :: 3138 Search Time::7.656ms
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