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0.13a Datasheet PDF File

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				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PHW13N40E PHB13N40E PHP13N40E
OCR Text	...00 V g ID = 13.7 A RDS(ON) 0.35 s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use...13A Tj = 25 C 200V 100 V VDD=320V PHP13N40E PHP13N40E 20 18 16 14 12 10 8 6 4 2 0 150 C Tj ...
Description	PowerMOS transistors Avalanche energy rated
File Size	98.86K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SGW13N60UFD SGW13N60UFDTM
OCR Text	... (PCB Mount) (2) Typ. ---Max. 2.0 3.5 40 Units C/W C/W C/W Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material) (c)2002 Fairchil...13A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Cap...
Description	Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
File Size	594.42K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SGW13N60UF
OCR Text	...t (PCB Mount) (2) Typ. --Max. 2.0 40 Units C/W C/W Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material) (c)2002 Fairchild Semico...13A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Cap...
Description	Ultra-Fast IGBT
File Size	535.65K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFRU6215 IRFU6215 IRFR6215
OCR Text	...ET D VDSS = -150V RDS(on) = 0.295 G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined...
Description	HEXFET? Power MOSFET Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)
File Size	137.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFRU9310 IRFU9310 IRFR9310
OCR Text	...DSS = -400V G S RDS(on) = 7.0 ID = -1.8A Description Third Generation HEXFETs from International Rectifier utilize advanced processi...13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + D.U.T. - VDS I...
Description	-400V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 7.0ohm，身份证\u003d- 1.8A
File Size	110.22K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLU8203PBF IRLR8203PBF IRLR8203
OCR Text	...ax. 30 20 110 76 120 140 69 0.92 -55 to + 175 Units V V A W W W/C C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case J...13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLR/U82...
Description	SMPS MOSFET
File Size	266.57K / 10 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	VN05N VN05N011Y VN05N012Y VN05N_012Y VN05N_011Y
OCR Text	0.18 I OUT 13 A VC C 26 V s s s s s OUTPUT CURRENT (CONTINUOUS): 13A @ Tc=25 oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION PENTA...
Description	High Side Smart Power Solid State Relay(高边智能化功率固态继电器)
File Size	193.11K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VN820 VN820-B5 VN820-B513TR VN820PT VN820PT13TR VN820SO VN820SO13TR VN820SP VN820SP13TR
OCR Text	...mum Switching Energy (L=4mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=13A) Maximum Switching Energy (L=3.7mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=13A) Maximum Switching Energy (L=4.48mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=13A) Power Dissipation TC...
Description	HIGH SIDE DRIVER
File Size	690.03K / 34 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFRU4105 IRFU4105 IRFR4105
OCR Text	... VDSS = 55V G S RDS(on) = 0.045 ID = 27A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U41...
Description	Power MOSFET(Vdss=55V / Rds(on)=0.045ohm / Id=27A) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?) HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?
File Size	140.69K / 10 Page	View it Online	Download Datasheet

For 0.13a Found Datasheets File :: 5360 Search Time::1.797ms
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