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  0.1-100mhz Datasheet PDF File

For 0.1-100mhz Found Datasheets File :: 14037    Search Time::2.016ms    
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    HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V64162

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
Part No. HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
OCR Text ...ndard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by ...1, 2, 4, 8 or Full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst Programmable CAS La...
Description SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system

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    HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY5

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
Part No. HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
OCR Text ...ndard 400mil 54pin TSOP-II with 0.8mm of pin pitch * All inputs and outputs referenced to positive edge of system clock - 1, 2, 4 or 8 for Interleave Burst * Programmable CAS Latency ; 2, 3 Clocks * * Data mask function by UDQM ...
Description 4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54

File Size 84.91K  /  12 Page

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    ICS302M ICS302MT ICS300 ICS300M ICS300MT ICS301M ICS301MT

ICST[Integrated Circuit Systems]
Part No. ICS302M ICS302MT ICS300 ICS300M ICS300MT ICS301M ICS301MT
OCR Text ...45/55 * Operating voltages of 3.0 to 5.5V * Full CMOS level outputs with 25mA drive capability at TTL levels * Tri-state output + PLL power ...1 Revision 111000 Integrated Circuit Systems, Inc. * 525 Race Street * San Jose *CA*95126*(408) 2...
Description QTClockQuick Turn Clock Synthesizer
(ICS300 - ICS302) QTClock Quick Turn Clock Synthesizer
QTClock⑩ Quick Turn Clock Synthesizer

File Size 64.37K  /  4 Page

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    IDT74FCT807BTSO IDT74FCT807BTSOB IDT74FCT807BTP IDT74FCT807CT IDT74FCT807BT IDT74FCT807BTD IDT74FCT807BTDB IDT74FCT807BT

IDT[Integrated Device Technology]
Integrated Device Technolog...
Part No. IDT74FCT807BTSO IDT74FCT807BTSOB IDT74FCT807BTP IDT74FCT807CT IDT74FCT807BT IDT74FCT807BTD IDT74FCT807BTDB IDT74FCT807BTE IDT74FCT807BTEB IDT74FCT807BTL IDT74FCT807BTLB IDT74FCT807BTPB IDT74FCT807BTPY IDT74FCT807BTPYB IDT74FCT807BTQ IDT74FCT807BTQB IDT74FCT807CTD IDT74FCT807CTDB IDT74FCT807CTE IDT74FCT807CTEB IDT74FCT807CTL IDT74FCT807CTLB IDT74FCT807CTP IDT74FCT807CTPB IDT74FCT807CTPY IDT74FCT807CTPYB IDT74FCT807CTQ IDT74FCT807CTQB IDT74FCT807CTSO IDT74FCT807CTSOB IDT54FCT807BT IDT54FCT807BTD IDT54FCT807BTDB IDT54FCT807BTE IDT54FCT807BTEB IDT54FCT807BTL IDT54FCT807BTLB IDT54FCT807BTP IDT54FCT807BTPB IDT54FCT807BTPY IDT54FCT807BTPYB IDT54FCT807BTQ IDT54FCT807BTQB IDT54FCT807BTSO IDT54FCT807BTSOB IDT54FCT807CT IDT54FCT807CTD IDT54FCT807CTDB IDT54FCT807CTE IDT54FCT807CTEB IDT54FCT807CTL IDT54FCT807CTLB IDT54FCT807CTP IDT54FCT807CTPB IDT54FCT807CTPY IDT54FCT807CTPYB IDT54FCT807CTQ IDT54FCT807CTQB IDT54FCT807CTSO IDT54FCT807CTSOB
OCR Text 0.5 MICRON CMOS Technology Guaranteed low skew < 250ps (max.) Very low duty cycle distortion < 350ps (max.) High speed: propagation delay < ...1:10 fanout Output rise and fall time < 1.5ns (max.) Low input capacitance: 4.5pF typical High Drive...
Description FAST CMOS 1-TO-10 CLOCK DRIVER

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    K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S28...1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positi...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 107.61K  /  10 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text 0.0 Mar. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2000 K4S28...1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the posi...
Description 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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    K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S2808...1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the posi...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL

File Size 124.69K  /  10 Page

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    K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text ... 54Pin sTSOP (400mil x 441mil) (0.4 mm Pin pitch) PIN FUNCTION DESCRIPTION Pin CLK CS Name System clock Chip select Input Function Activ...1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 1 50 Unit V V C W mA CMOS SDRAM Note : Permanent device damage...
Description 128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP

File Size 62.82K  /  8 Page

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    K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S28...1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positi...
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 107.58K  /  10 Page

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    K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S28163

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
OCR Text 0.0 Mar. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2000 K4S28...1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the posi...
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 111.68K  /  11 Page

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