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TY Semiconductor Co., Ltd
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Part No. |
CJP08N65
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OCR Text |
...anche energy (note1) e as 2 5 0 mj thermal resistance from junction to ambient r ja 62.5 /w operating and storage temperature ran...8a 1.4 v zero gate voltage drain current i dss v ds =650v, v gs =0v 10 a gate-body ... |
Description |
TO-220-3L Plastic-Encapsulate MOSFETS
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File Size |
459.87K /
2 Page |
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it Online |
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Inchange Semiconductor Comp...
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Part No. |
2SC2898
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OCR Text |
...emitter sustaining voltage i c =0.2a; l=100mh 400 v v (br) ebo emitter-base breakdown voltage i e =10ma ;i c =0 7 v v...8a(pulse test) 1.0 v v besat base-emitter saturation voltage i c =4.0a; i b =0.8a(pulse te... |
Description |
Silicon NPN Power Transistors
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File Size |
84.23K /
4 Page |
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it Online |
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New Jersey Semi-Conductor P...
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Part No. |
MJF13009
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OCR Text |
...@lc=8.0a ? switching time : tf= 0.7 u s(max.)@ lc= 8.0a applications ? designed for use in high-voltage, high-speed, power swit- ching in in...8a;lb=1.6a ic=12a;ib=3a ic=5a;ib=1a ic=8a;ib=1.6a vcev= 700v vbe(off)= 1 5v tc=100'c veb= 9v; lc= 0 ... |
Description |
Silicon NPN Power Transistor
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File Size |
81.54K /
2 Page |
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it Online |
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Inchange Semiconductor Comp...
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Part No. |
2SD5075
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OCR Text |
...uration voltage i c =2.5a;i b =0.8a 8.0 v v besat base-emitter saturation voltage i c =2.5a;i b =0.8a 1.5 v i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma i cbo collector cut-off current v cb =800v; i e =0 10 | ... |
Description |
Silicon NPN Power Transistors
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File Size |
35.60K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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