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For w channel Found Datasheets File :: 84423 Search Time::1.796ms
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				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	...10s) 11.5 (typical) Units A w w/C V mJ A mJ V/ns o C g www.irf.com 1 01/22/01 IRF9230 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS BV DSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to...
Description	TRANSISTORS P-channel(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-channel, Si, POwER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited International Rectifier SEME-LAB[Seme LAB]
Part No.	IRF9240 IRF9240-SMD
OCR Text	... 15 18 12 nH nH Max. Unit 1.0 C/w C/w C/w C Unit A V ns ns 1300 450 250 90 nC pF 0.5 Min. -200 -2 Typ. Max. -4 -100 100 -250 -1000 Unit V V nA nA mA mA A w S THERMAL CHARACTERISTICS Characteristic RqJC Junction to Case RqCS RqJA ...
Description	CAP CER 250VAC 150PF X7R 1808 P-channel POwER MOSFET
File Size	25.33K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	... RDS(on) = 0.030 T o p V ie w Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...channel Driver Gate Drive P.w. Period D= P.w. Period [VGS=10V ] *** D.U.T. ISD waveform ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...channel Driver Gate Drive P.w. Period D= P.w. Period [VGS=10V ] *** D.U.T. ISD waveform ...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	...o 150 300 260 UNITS V V A A A V w w/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . ....
Description	6A, 100V, 0.600 Ohm, P-channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	...123 12.70 19.05 -100V -9.3A w 0.31w 10.41 10.92 2.54 BSC 2.65 2.75 * HERMETICALLY SEALED TO-220 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS TO-220M - Metal Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source * LIGHTwEIGHT...
Description	P-channel POwER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...channel Driver Gate Drive P.w. Period D= P.w. Period [VGS=10V ] *** D.U.T. ISD waveform Re...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...channel Driver Gate Drive P.w. Period D= P.w. Period [VGS=10V ] *** D.U.T. ISD waveform ...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9530S IRF9530SMD
OCR Text	...0 .3 9 (0 .4 0 9 ) -100V -8A w 0.35w 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4 4 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) ...
Description	P-channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-channel POwER MOSFET FOR HI.REL APPLICATIONS
File Size	22.38K / 2 Page	View it Online	Download Datasheet

For w channel Found Datasheets File :: 84423 Search Time::1.796ms
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