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vf esd Datasheet PDF File

For vf esd Found Datasheets File :: 9061 Search Time::3.906ms
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				NEC, Corp. NEC Corp. NEC[NEC] http://
Part No.	RD12MW RD2.4MW RD7.5MW RD4.3MW RD24MW RD4.7MW RD8.2MW RD6.8MW RD2.7MW RD5.6MW RD3.3MW RD33MW RD9.1MW RD27MW RD2.2MW RD18MW RD3.6MW RD6.2MW RD22MW RD5.1MW RD36MW RD2.0MW RD3.0MW RD20MW RD16MW RD10MW RD13MW RD15MW RD3.9MW RD30MW RD39MW RD11MW
OCR Text	... Voltage +Forward Voltage (VZ + vf) (V) MIN. RD2.0MW RD2.2MW RD2.4MW RD2.7MW RD3.0MW RD3.3MW RD3.6MW RD3.9MW RD4.3MW RD4.7MW RD5.1MW RD5.6MW RD6.2MW RD6.8MW RD7.5MW RD8.2MW RD9.1MW RD10MW RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD2...
Description	ZENER DIODES 200 mW 3-PIN MINI MOLD surface mount silicon Zener diodes 表面贴装硅稳压二极管 CA-BAYONET
File Size	64.03K / 8 Page	View it Online	Download Datasheet

				Alpha Industries Inc ALPHA[Alpha Industries]
Part No.	SMP1340 SMP1340-001 SMP1340-003 SMP1340-004 SMP1340-005 SMP1340-011 SMP1340-079
OCR Text	...esistance (RS) Forward Voltage (vf) Carrier Lifetime (TI) I Region Width Condition VR = 50 V F = 1 MHz, V = 5 V F = 100 MHz, I = 1 mA F = 100 MHz, I = 5 mA F = 100 MHz, I = 10 mA IF = 10 mA IF = 10 mA 0.21 1.7 1.0 0.85 0.85 100 0.80 2.0 1.2...
Description	Fast Switching Speed, Low Capacitance Plastic Packaged PIN Diodes Fast Switching Speed Low Capacitance Plastic Packaged PIN Diodes
File Size	33.88K / 3 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	ST1284 ST1284-01 ST1284-01A8 ST1284-01A8RL ST1284-01T8RL ST1284-02 ST1284-02A8 ST1284-02A8RL ST1284-02T8RL ST1284-03 ST1284-03A8RL ST1284-03T8RL ST1284-XXA8 ST1284-XXA8T8 ST1284-XXT8 ST1284-02T8 ST1284-03A8 ST1284-03T8 ST1284-01T8
OCR Text	...TICS (Tamb = 25C) Symbol IR VBR vf Parameter Leakage current Breakdown voltage Forward voltage drop Test condition Vcc = 5.0V IR = 1mA IF = ...esd protection compatible with IEC61000-4-2 level 4 Fig. 1:Cell 1 for line termination, EMI filte...
Description	PARALLEL PORT SINGLE TERMINATION NETWORK WITH /-15KV esd PROTECTION PARALLEL PORT SINGLE TERMINATION NETWORK WITH ±15kV esd PROTECTION PARALLEL PORT SINGLE TERMINATION NETWORK WITH 15kV esd PROTECTION PARALLEL PORT SINGLE TERMINATION NETWORK WITH 【15KV esd PROTECTION RECTIFIER FAST-RECOVERY SINGLE 1A 400V 30A-ifsm 1.3V-vf 150ns 5uA-ir DO-41 5K/REEL-13 并行端口终端网络与单15kV esd保护 PARALLEL PORT SINGLE TERMINATION NETWORK WITH 5kV esd PROTECTION 并行端口终端网络与单5kV esd保护
File Size	142.93K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	TLE4205 TLE4205G Q67006-A9114 Q67000-A9025 TLE4205-G
OCR Text	...00956 F = 0.6 A vfU vfL vf 1.4 I 2.0 1.2 1.0 0.8 0.6 1.6 V S = 13.5 V 1.2 0.8 0.4 0.2 0.4 0 -40 0 40 80 C 120 0 -40 0 40 80 C 120 TJ TJ Saturation Voltag...
Description	Smart Motorbridges Driver ICs - 1A DC Motor Driver 1-A DC Motor Driver
File Size	90.84K / 13 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA1715 UPA1715G PA1715
OCR Text	...td(on) tr td(off) tf QG QGS QGD vf(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -6.0 A VGS = -4.5 V, ID = -6.0 A VGS = -4.0 V, ID = -6.0 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -6.0 A VDS = -30 V, VGS = 0 V VGS = MIN. TYP. 8.5 11 12 M...
Description	MOS Field Effect Transistor SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	65.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2
OCR Text	...td(on) tr td(off) tf QG QGS QGD vf(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -4.0 A VGS = -4.5 V, ID = -4.0 A VGS = -4.0 V, ID = -4.0 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -4.0 A VDS = -30 V, VGS = 0 V VGS = MIN. TYP. 12.5 17 19 ...
Description	Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
File Size	64.80K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA1717 UPA1717G UPA1717G-E2 UPA1717G-E1
OCR Text	...td(on) tr td(off) tf QG QGS QGD vf(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -3 A VGS = -4.5 V, ID = -3 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -3 A VDS = -30 V, VGS = 0 V VGS = # 25 V, VDS = 0 V VDS = -10 V VGS = 0 V f = 1 MHz ID ...
Description	P-channel enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	63.31K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	UPA1792 UPA1792G
OCR Text	...td(on) tr td(off) tf QG QGS QGD vf(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 3.4 A VGS = 4.5 V, ID = 3.4 A VGS = 4.0 V, ID = 3.4 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID =3.4 A VDS = 30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V VGS = ...
Description	SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE 开关N沟道P沟道功率场效应晶体管工业
File Size	102.18K / 12 Page	View it Online	Download Datasheet

				NEC
Part No.	UPA611TA PA611TA D11707EJ1V0DS00
OCR Text	... 0.6 0.8 1.0 1.2 vf(S-D) - Source to Drain Voltage - V 4 Data Sheet D11707EJ1V0DS00 PA611TA REFERENCE Document Name NEC semiconductor device reliability / quality control system Quality grade on NEC semiconductor d...
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING From old datasheet system
File Size	50.75K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BAT66 BAT66-05
OCR Text	...F = 10 mA I F = 100 mA IF = 1 A vf 0.28 0.35 0.47 0.35 0.6 IR 10 1000 V Unit A AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz CT - 30 40 pF 2 Feb-14-2003 BAT66... Reverse current IR = TA = Parame...
Description	Schottky Diodes - Low power Diode in SOT22 Silicon Schottky Diode
File Size	421.58K / 3 Page	View it Online	Download Datasheet

For vf esd Found Datasheets File :: 9061 Search Time::3.906ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |