v-iii pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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v-iii Datasheet PDF File

For v-iii Found Datasheets File :: 18170 Search Time::3.188ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ409 2SJ409L 2SJ409S
OCR Text	...d switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Out...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Silicon P-Channel MOS FET Power switching MOSFET
File Size	28.01K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ410
OCR Text	...4 -6 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ410 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltag...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Silicon P-Channel MOS FET
File Size	29.02K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ450
OCR Text	... power High speed switching 2.5 V gate drive device. Outline UPAK 21 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ450 Ab...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Silicon P-Channel MOS FET
File Size	43.82K / 9 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ451
OCR Text	...resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G ...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Silicon P-Channel MOS FET
File Size	39.56K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ452
OCR Text	...resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G ...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Silicon P-Channel MOS FET
File Size	39.33K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ471
OCR Text	... -30 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ471 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltag...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Silicon P Channel DV-L MOS FET High Speed Power Switching
File Size	46.25K / 10 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	...torage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating -60 25 100 20 325,9 50 150 -55 ~ +150 Unit V A A V mJ W C C...III Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=-12,5A; VGS=10V 25A ...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	... -30 50 150 -55 to +150 Unit V V A A A W C C 2 2SJ479(L), 2SJ479(S) Electrical Characteristics (Ta = 25C) Item Drain to source br...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Power switching MOSFET Silicon P Channel DV-L MOS FET High Speed Power Switching Silicon P Channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	...DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D ...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	...tance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPA...III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

For v-iii Found Datasheets File :: 18170 Search Time::3.188ms
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