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For u-turn Found Datasheets File :: 28301    Search Time::1.188ms    
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    IRF1310N

International Rectifier
Part No. IRF1310N
OCR Text ...y factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature...
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 101.65K  /  8 Page

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    IXYS[IXYS Corporation]
Part No. IXGQ20N120BD1 IXGQ20N120B
OCR Text ...by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B...Turn-off Ene rgy Loss on RG I C = 40A 15 12 9 6 3 0 0 10 20 30 40 50 60 E off - milliJoules...
Description High Voltage IGBT with Diode

File Size 594.73K  /  6 Page

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    IRF1310NL IRF1310NS IRF1310NSTRL IRF1310NSTRR

International Rectifier
Part No. IRF1310NL IRF1310NS IRF1310NSTRL IRF1310NSTRR
OCR Text ...y factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature...
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 164.25K  /  10 Page

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    FGW25N120VD

Fuji Electric
Part No. FGW25N120VD
OCR Text ... ge ge v s wi t ching f r e q u enc y f s [ k h z] c o l l ec t or - e mi tt e r co r r en t : i ce [ a ] c o llec t or cu r ren t i c [a ] c a s e te m p e r a t ure [ c ] ga t e t h r e s h ol d v ol t a g e v g...
Description Discrete IGBT (High-Speed V series) 1200V / 25A

File Size 493.75K  /  8 Page

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    PERICOM[Pericom Semiconductor Corporation]
Part No. PI5A127WX PI5A127 PI5A127UEX PI5A127UX PI5A127W
OCR Text ...-- 8-pin, 118 mil plastic MSOP (U) -- 8-pin, 150 mil plastic SOIC (W) Description The PI5A127 is a dual SPST (single-pole single-throw) ...Turn- On Time Symbol Conditions Te mp(C) M in.(1) Typ.(2) M ax.(1) Units VIH...
Description Dual, Wide Bandwidth Analog Switches

File Size 237.99K  /  7 Page

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    DMG8601UFG DMG8601UFG-7

Diodes Incorporated
Part No. DMG8601UFG DMG8601UFG-7
OCR Text ...ce voltage (v) ds i, d r ain c u r r en t (a) d v = 2.0v gs v = 3.0v gs v = 4.5v gs v = 8.0v gs v = 2.5v gs 0 5 10 15 20 25 30 0 0.5 1.0 1.5 2.0 2.5 3.0 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ai...
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 162.31K  /  6 Page

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    CHUNGHWA PICTURE TUBES
Part No. CLAA170EA07
OCR Text u u n n g g h h w w a a p p i i c c t t u u r r e e t t u u b b e e s s , , l l t t d d . . t t e e c c h h n n i i c c a a l l ...turn-on conditions: t1 Q 10ms 1 sec Qt4 0 t2 Q 20ms 200ms Q t5 ...
Description Display Module

File Size 861.55K  /  23 Page

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    AUO
Part No. T315XW02-VF
OCR Text u o p t r o n ics , i n c. ja n u a r y , 20 0 3 a l l r i g h ts r ese r v e d . t 3 1 5 xw 0 2 vf - s p ecs....turn on condition update electrical specification: dimming ratio add dimming ratio (luminance) ...
Description LCD Module

File Size 754.52K  /  29 Page

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    SIHFZ48RL-E3 IRFZ48RSPBF IRFZ48RL

Vishay Siliconix
Part No. SIHFZ48RL-E3 IRFZ48RSPBF IRFZ48RL
OCR Text ... 0.0 0.5 1.0 1.5 2.0 2.5 t , j u nction temperat u re ( c) r , drain-to-so u rce on resistance ( n ormalized) j ds(on) v = i = gs d 10 v 72a document number: 91296 www.vishay.com s-pending-rev. a, 22-jul-08 5 irfz48rs, irf...
Description Power MOSFET

File Size 959.34K  /  8 Page

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    2N7334JANTXV IRFG110 IRFG110-15

International Rectifier
Part No. 2N7334JANTXV IRFG110 IRFG110-15
OCR Text ...i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) dc www.irf.com 5 irfg110 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on...
Description POWER MOSFET THRU-HOLE (MO-036AB)
Simple Drive Requirements

File Size 265.09K  /  7 Page

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