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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643233H-C K4S643233H-F K4S643233H-F1H K4S643233H-F1L K4S643233H-FE K4S643233H-FHE K4S643233H-G K4S643233H-N K4S643233H K4S643233H-L K4S643233H-HN600 K4S643233H-FG600 K4S643233H-HG1H0 K4S643233H-FE600
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -HXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4S643233H is 67,108,864 bit...
Description	2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 Mobile-SDRAM 移动SDRAM
File Size	138.79K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M563233E-N K4M563233E K4M563233E-C K4M563233E-E K4M563233E-F1H K4M563233E-F1L K4M563233E-F75 K4M563233E-F80 K4M563233E-G K4M563233E-L K4M563233E-M K4M563233E-EE800 K4M563233E-ME800
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M563233E is 268,435,456 bi...
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
File Size	139.67K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5V52LF
OCR Text	...ks operation ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4, 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 cl...
Description	4Banks x 2M x 32bits Synchronous DRAM
File Size	348.61K / 13 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163PE-F1L K4M56163PE-BF1L0 K4M56163PE-RG1L0 K4M56163PE-BF900
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) * DQM for mas...Leaded, -BXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M56163PE is 268,435,456 bi...
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
File Size	110.29K / 12 Page	View it Online	Download Datasheet

				Illinois Capacitor, Inc. Illinois Capacitor, Inc...
Part No.	103PPB630K 103PPB162K 103PPB202K 103PPB102KE 103PPB162KB 473PPB630KB 474PPB630KB 333PPB102K 683PPB102K 104PPB102K 154PPB102K 332PPB102K 472PPB102K 682PPB102K 153PPB102K 223PPB102K 473PPB102K 224PPB102K 223PPB162K 223PPB202K 153PPB202K 153PPB102KB 153PPB630K 153PPB162K
OCR Text	self healing ? stable with frequency and temperature ? high dvdt ? high voltage applications ? power semiconductor circuits ?...leaded polypropylene film capacitors for pulse applications l 18 26.5 32 42.5 s 15 22...
Description	Radial leaded metallized polypropylene film capacitors for Pulse applications
File Size	518.40K / 3 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4M511633E-Y K4M511633E K4M511633E-C K4M511633E-F1H K4M511633E-F1L K4M511633E-F75 K4M511633E-L K4M511633E-P K4M511633E-YC1H0
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -PXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M511633E is 536,870,912 bi...
Description	32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
File Size	110.15K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S
OCR Text	...ion may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. The Mobile SDRAM uses an internal...Leaded 512M SDRAM ORDERING INFORMATION Part Number HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6L...
Description	512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
File Size	646.61K / 51 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E-F1H K4M511533E-F1L K4M511533E-F75 K4M511533E-L K4M511533E-Y K4M511533E-YC K4M511533E-YP K4M511533E-YF1H0 K4M511533E-YC1L0 K4M511533E-YL1L0 K4M511533E-PF750 K4M511533E-YC750
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded , -PXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M511533E is 536,870,912 b...
Description	Mobile-SDRAM 移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
File Size	104.22K / 12 Page	View it Online	Download Datasheet

				Holt Integrated Circuits, Inc. HOLT INTEGRATED CIRCUITS INC
Part No.	HI-8110QI HI-8110JF-85
OCR Text	...f 2 modes; externally driven or self-oscillating. when the lcd? input is externally driven with the lcd?opt input open circuit (figure 2), t...leaded chip carrier 40 48 package type: pin no. 1 ident .045 x 45 .050 .005 (1.27 .127) .045 ...
Description	CMOS HIGH VOLTAGE DISPLAY DRIVER CMOS高压显示驱动程序
File Size	108.15K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S641633H-C K4S641633H-F1H K4S641633H-F1L K4S641633H-F75 K4S641633H-G K4S641633H-L K4S641633H-N K4S641633H-R K4S641633H-RBE K4S641633H-RE K4S641633H-RL1L0
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -BXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4S641633H is 67,108,864 bit...
Description	4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
File Size	110.06K / 12 Page	View it Online	Download Datasheet

For self-leaded Found Datasheets File :: 875 Search Time::3.156ms
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