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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD1050
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| OCR Text |
...per-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features Si3N4... |
| Description |
0.75W POWER PHEMT
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| File Size |
174.13K /
2 Page |
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it Online |
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Amphenol, Corp.
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD200
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| OCR Text |
...per-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable mediumpower applications. The FPD200 also features Si3N... |
| Description |
22 UF 10% 16V (CASE C;6032) TANT C CAP 一般用途PHEMT器件
GENERAL PURPOSE PHEMT
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| File Size |
182.65K /
2 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2250DFN
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| OCR Text |
...per-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD2250... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
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| File Size |
151.56K /
5 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2250SOT89
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| OCR Text |
...per-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD2250... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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| File Size |
380.69K /
8 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2250
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| OCR Text |
...per-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD2250 also features Si3N... |
| Description |
1.5W POWER PHEMT
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| File Size |
180.89K /
2 Page |
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it Online |
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Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD3000P100
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| OCR Text |
...per-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD3000P100 also features ... |
| Description |
2W PACKAGED POWER PHEMT
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| File Size |
179.94K /
3 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD3000SOT89
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| OCR Text |
...per-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD3000... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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| File Size |
390.69K /
8 Page |
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it Online |
Download Datasheet |
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Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD3000
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| OCR Text |
...per-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD3000 also features Si3N... |
| Description |
2W POWER PHEMT
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| File Size |
181.19K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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