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Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060MBR1
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| OCR Text |
... power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial an d industrial application...cdma performance @ 880 mhz, v dd = 28 volts, i dq = 450 ma, p out = 14 watts avg., is - 95 cdma (... |
| Description |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
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| File Size |
530.35K /
16 Page |
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it Online |
Download Datasheet
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Matsshita / Panasonic
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| Part No. |
AN6080FHN
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| OCR Text |
...
12
11
10
9
I in
N.C.
13
8
IX in
PA GND
14 GCA 1/2 /2
7
B.B VCC
GCA GND
15
6
Q in
IF out
16
GCA CTRL
5
QX in
3
1
2
Gain control
IF out X
PA VCC
GCA VCC
4... |
| Description |
ICs for Mobile Communication
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| File Size |
144.18K /
10 Page |
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it Online |
Download Datasheet |
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panasonic
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| Part No. |
AN6080FHN
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| OCR Text |
...
12
11
10
9
I in
N.C.
13
8
IX in
PA GND
14 GCA 1/2 /2
7
B.B VCC
GCA GND
15
6
Q in
IF out
16
GCA CTRL
5
QX in
3
1
2
Gain control
IF out X
PA VCC
GCA VCC
4... |
| Description |
QFN016-P-0304A
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| File Size |
163.09K /
10 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S19060NBR1 MRF6S19060NR1
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| OCR Text |
n - channel enhancement - mode lateral mosfets designed for n - cdma base station applications with frequencies from 1930 to 1990 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
613.40K /
16 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G27L-90P BLF7G27LS-90P
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| OCR Text |
...lf7g27l-90p (sot1121a) 1d r a i n 1 2d r a i n 2 3g a t e 1 4g a t e 2 5s o u r c e [1] blf7g27ls-90p (sot1121b) 1drain1 2drain2 3gate1 4gat...cdma, single carri er is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). p... |
| Description |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
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| File Size |
951.03K /
14 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF5S21100HR3 MRF5S21100HSR3
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| OCR Text |
n - channel enhancement - mode lateral mosfets designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - ... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
375.20K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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