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  ms-7 Datasheet PDF File

For ms-7 Found Datasheets File :: 131431    Search Time::3.25ms    
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    BAT54CFILM BAT54SFILM BAT54AFILM BAT54FILM 5505 BAT54S BAT54C BAT54A BAT54 BAT54.A.C.S

SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BAT54CFILM BAT54SFILM BAT54AFILM BAT54FILM 5505 BAT54S BAT54C BAT54A BAT54 BAT54.A.C.S
OCR Text ...: * tp = 380 s, < 2% ** tp = 5 ms, < 2% Min. Typ. Max. 240 320 400 500 900 1 100 Unit mV VR = 30 V A DYNAMIC CHARACTE...7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3 = 0.2 Ta=25C = 0.1 Ta=50C 0.10 T Single pulse...
Description SMALL SIGNAL SCHOTTKY DIODE
SMALL SIGNAL SCHOTTKY DIODE
From old datasheet system

File Size 82.55K  /  5 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text ...perature tp 1 s; 0.5 tp < 10 ms Tamb 25 C PARAMETER CONDITIONS BAT54W series MIN. MAX. UNIT - - - - - -65 - -65 30 200...7 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA: see Fig.9 f = 1 MHz...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    BCM3033

Broadcom Corporation.
ETC
Electronic Theatre Controls, Inc.
Part No. BCM3033
OCR Text ...in the BCM3033 is a 10-bit, 114-MS/s DAC with differential analog outputs. Operation of the BCM3033 involves a serial or parallel bit stream input that can be passed through the FEC encoder or directly to the modulator. The resulting data i...
Description QAMLink® Universal Modulator
QAMLINK UNIVERSAL MODULATOR QAMLINK通用调制

File Size 134.59K  /  2 Page

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...F = 2 dB. F = 2.5 dB. F = 3 dB. ms; Gmax = 11.8 dB. 0.2 (6) (7) 5 0.5 135 o (8) 2 1 45 o MLB825 (6) G = 11 dB. (7) G = 10 dB. (8) G = 9 dB. f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 . 1.0 90 o Fig.17 Common em...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

File Size 154.15K  /  16 Page

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ...= 2.5 dB 0.2 Gmax = 13 dB 180 0 MS 0.2 G = 12 dB 0.2 G = 11 dB G = 10 dB 5 F = 2 dB OPT Fmin = 1. 9 dB 0.5 1 2 5 0 5 2 45 0.8 0.6 0.4 0.2 0 ...7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

File Size 146.07K  /  13 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...ow or high; VA=13.5 V td = 400 ms, RI = 2 , ID=0,5*3.5A td = 400 ms, RI = 2 , ID= 3.5A DIN humidity category, DIN 40 040 IEC climatic categ...7 30 120 2200 max. 73 5 2.2 60 300 4000 V A V A Unit VDS(AZ) IDSS VIN(th) IIN(1) 60 1.3 800 ...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...+ VS VIN = 0 and 10 V, td = 400 ms, RI = 2 W, RL = 6 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to J...7 10 2.2 30 A mW IDSS 1.5 4 8 12 V A VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1@ 6 cm2 c...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text ....7 800 25 - - - - - V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... + 150...7 BTS 120 Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T Semiconductor Grou...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUH1215 4496

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH1215 4496
OCR Text ... Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Oper...7 January 1999 BUH1215 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 0.63 ...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... This value applies for tp = 10 ms, duty cycle 2%. SYMBOL VCEO VCES VEBO IC ICM IB IBM Ptot Tj Tstg TL VALUE 700 1500 11 2 2.5 2 2.5 50 -55...7 0.3 0.7 21 25 25 18 (see Notes 2 and 3) TEST CONDITIONS MIN 700 1500 11 100 100 1 1.0 1.1 1.2 1.2 ...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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