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ms-300 Datasheet PDF File

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				eupec GmbH
Part No.	BSM200GA170DN2S
OCR Text	...ulsed collector current, tp = 1 ms TC = 25 C TC = 80 C Power dissipation per IGBT TC = 25 C Chip temperature Storage temperature Thermal res...300 250 200 150 100 50 0 0.0 1.0 2.0 3.0 4.0 V VCE 6.0 Typ. output characteristics IC = f (VCE) p...
Description	IGBT Power Module
File Size	259.21K / 10 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	BSM300GA120DN2 BSM300GA120DN2S
OCR Text	...ulsed collector current, tp = 1 ms TC = 25 C TC = 80 C Power dissipation per IGBT TC = 25 C Chip temperature Storage temperature Thermal res...300 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Sym...
Description	IGBT Power Module
File Size	237.50K / 11 Page	View it Online	Download Datasheet

				Powersem
Part No.	PSKD142
OCR Text	...165 a i fsm t vj = 45c; t = 10 ms (50 hz), sine 4700 a v r = 0 t = 8.3 ms (60 hz), sine 5000 a t vj = t vjm t = 10 ms (50 hz), sine 4100 a v r = 0 t = 8.3 ms (60 hz), sine 4300 a i 2 dt t vj = 45c t = 10 ms (50 hz), sine 110 000 ...
Description	Fast Recovery Epitaxial Diode (FRED) Module
File Size	209.51K / 3 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	MCD255-12IO1
OCR Text	...f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 140 i2t t = 45c value fo...300 v = ? v drm t s p = 200 non-repet., i = 250 a t 125 r thch 0.040 thermal resistance case t...
Description	Thyristor Diode Module
File Size	334.23K / 6 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	BSM300GA170DN2
OCR Text	...ulsed collector current, tp = 1 ms TC = 25 C TC = 80 C Power dissipation per IGBT TC = 25 C Chip temperature Storage temperature Thermal res...300 Symbol VCE VCGR 1700 20 A Values 1700 Unit V VCE IC Package SINGLE SWITCH 1 SSW SENSE 1 Orderin...
Description	IGBT Power Module
File Size	263.10K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	PHN1015
OCR Text	... VDS/ ID tp = 10 us 100 us 10 1 ms 10 ms Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS 100 Drain-Sou...300 Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level...
Description	N-channel TrenchMOS transistor Logic level
File Size	94.37K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP3N60E PHB3N60E
OCR Text	...ive load, IAS = 1.8 A; tp = 0.2 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche ener...300 43 25 4.4 4.0 100 500 200 30 3 15 V %/K V S A A nA nC nC nC ns ns ns ns nH nH nH pF pF pF VG...
Description	PowerMOS transistors Avalanche energy rated
File Size	79.31K / 9 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. Vishay Intertechnology, Inc. Vishay Telefunken VISAY[Vishay Siliconix]
Part No.	TCDT1100 TCDT1100G TCDT1101 TCDT1101G TCDT1103 TCDT1103G TCDT1102G TCDT1102
OCR Text	... 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector c...300 V VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd Symbol Vpd VIOTM Vpd ...
Description	Optocoupler with Phototransistor Output 与光电晶体管光电耦合器输 From old datasheet system
File Size	138.69K / 8 Page	View it Online	Download Datasheet

				Vishay Telefunken Vishay Siliconix
Part No.	TCDT1122 TCDT1122G TCDT1120 TCDT1120G TCDT1124 TCDT1124G TCDT1120GSERIES TCDT1120SERIES TCDT1123G TCDT1123
OCR Text	... 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collec...300 Psi 250 200 VPd (mW) Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Ty...
Description	Optocoupler with Phototransistor Output From old datasheet system
File Size	157.68K / 10 Page	View it Online	Download Datasheet

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