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For losses Found Datasheets File :: 31275    Search Time::2.344ms    
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    IRF6691TR1

International Rectifier
Part No. IRF6691TR1
OCR Text ...c converters low conduction losses low reverse recovery losses low switching losses low reverse recovery charge and low vf low profile (<0.7 mm) dual sided cooling compatible compatible with existing surface moun...
Description Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes.

File Size 800.83K  /  12 Page

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    MMSF4P01HD ON2266

Motorola, Inc
Part No. MMSF4P01HD ON2266
OCR Text ...ver, snubbing reduces switching losses. 4800 4000 C, CAPACITANCE (pF) 3200 2400 Crss 1600 800 0 Ciss VDS = 0 V VGS = 0 V TJ = 25C Ciss Coss Crss 8 4 VGS 0 VDS 4 8 12 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig...
Description From old datasheet system
SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS

File Size 296.63K  /  10 Page

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    MMSF5N02HD ON2268

Motorola, Inc.
Part No. MMSF5N02HD ON2268
OCR Text ...ver, snubbing reduces switching losses. 3500 3000 VDS = 0 V Ciss VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 2500 2000 1500 1000 Coss 500 0 10 5 VGS 0 VDS Crss 5 10 15 20 Crss Ciss GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAG...
Description SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
From old datasheet system

File Size 293.25K  /  10 Page

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    MMSF5N03HD MMSF5N03HD_D ON2270

Motorola, Inc.
ON Semi
Part No. MMSF5N03HD MMSF5N03HD_D ON2270
OCR Text ...ver, snubbing reduces switching losses. 3500 VDS = 0 V 3000 C, CAPACITANCE (pF) 2500 2000 1500 1000 500 Crss 0 10 5 0 VGS 5 10 VDS 15 20 25 30 Coss Crss Ciss Ciss VGS = 0 V TJ = 25C GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (Volts) ...
Description SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS
From old datasheet system

File Size 294.36K  /  10 Page

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    IRF6691TR1PBF

International Rectifier
Part No. IRF6691TR1PBF
OCR Text ...e both conduction and switching losses. this part contains an integrated schottky diode to reduce the qrr of the body drain diode further reducing the losses in a synchronous buck circuit. the reduced losses make this product ideal for high...
Description A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes.

File Size 805.82K  /  10 Page

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    2SD2391T100

ROHM
Part No. 2SD2391T100
OCR Text ...e for any damages, expenses or losses incurred by you or third parties arising from the use of any ro hms products for specific applications. (note1) medical equipment classification of the specific applications japan usa eu china c...
Description NPN Driver Transistor

File Size 862.17K  /  9 Page

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    NTMS7N03R2

ONSEMI[ON Semiconductor]
Part No. NTMS7N03R2
OCR Text ...ver, snubbing reduces switching losses. 2800 C, CAPACITANCE (pF) 2400 2000 1600 1200 800 400 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25C Crss Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOL...
Description Power MOSFET 7 Amps, 30 Volts

File Size 97.78K  /  12 Page

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    ST Microelectronics
Part No. STTH16L06CTY
OCR Text ...educes switching and conduction losses ? low thermal resistance ? ppap c apable ? ecopack ? 2 compliant component description the stth16l06c-y is developed using st?s turbo 2 600 v technology. it?s specially suited for use in switching po...
Description Automotive Turbo 2 ultrafast high voltage rectifier

File Size 167.47K  /  9 Page

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    APTGF50DSK120T3G

Microsemi Corporation
Part No. APTGF50DSK120T3G
OCR Text ... (A) 125 Switching Energy losses (mJ) Switching Energy losses vs Gate Resistance 18 Switching Energy losses (mJ) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 Gate Resistance (Ohms) 50 Eoff, 25A Eon, 25A Eon, 50A Eoff, 50A VCE = 600V VGE = ...
Description Dual Buck chopper NPT IGBT Power Module

File Size 239.61K  /  7 Page

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    SPA07N60C2 SPB07N60C2 SPP07N60C2

INFINEON[Infineon Technologies AG]
Part No. SPA07N60C2 SPB07N60C2 SPP07N60C2
OCR Text ...alanche causes additional power losses that can be calculated as P AV =EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed...
Description Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction losses & fastest Switching

File Size 158.37K  /  14 Page

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For losses Found Datasheets File :: 31275    Search Time::2.344ms    
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