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  ghz-2.170 Datasheet PDF File

For ghz-2.170 Found Datasheets File :: 3921    Search Time::2.891ms    
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    MRF917T1

MOTOROLA[Motorola, Inc]
Part No. MRF917T1
OCR Text ...plifiers, at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand-held phones. * Small, Surf...2.0 60 222 3.0 - 55 to +150 150 Unit Vdc Vdc Vdc mAdc mW mW/C C C THERMAL CHARACTERISTICS Charac...
Description LOW NOISE HIGH FREQUENCY TRANSISTOR

File Size 252.24K  /  12 Page

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    MRFIC1505 MRFIC1505AR2 MRFIC1505R2

Freescale (Motorola)
ETC
Freescale Semiconductor, Inc
Part No. MRFIC1505 MRFIC1505AR2 MRFIC1505R2
OCR Text GHz GPS DOWNCONVERTER This integrated circuit is intended for GPS receiver applications. The dual conversion design is implemented in Motor...2.7 V Operation * 28 mA Typical Current Consumption * Low-Cost, Low-Profile Plastic LQFP Package MOS...
Description MRFIC1505 Integrated GPS Downconverter
MRFIC1505/MRFIC1505A Integrated GPS Downconverter

File Size 128.97K  /  8 Page

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    MRFIC1805

MOTOROLA[Motorola, Inc]
Part No. MRFIC1805
OCR Text GHz GaAs Power Amplifier This two-stage class AB monolithic GaAs amplifier in a low-cost 16 lead plastic package is designed for output or ...2.5 GHz. * High Output Capability = 27 dBm Typical Psat 21.5 dBm Typical with PHS Format * High Gain...
Description 1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

File Size 218.53K  /  10 Page

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    MRFIC1806

MOTOROLA[Motorola, Inc]
Part No. MRFIC1806
OCR Text GHz PA Driver/Ramp Designed primarily for use in DECT, Japan Personal Handy System (PHS), and other wireless Personal Communication Systems...2,500 Units per 16 mm, 13 inch Reel. * Device Marking = M1806 CASE 751B-05 (SO-16) MRFIC1806 ...
Description 1.8 GHz DRIVER AMPLIFIER AND RAMP CIRCUIT GaAs MONOLITHIC INTEGRATED CIRCUIT

File Size 276.89K  /  12 Page

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    NE6510379A NE6510379A-T1

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE6510379A NE6510379A-T1
OCR Text ... 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty : GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 d...2 38 38 18 150 -65 to +150 Unit V V A mA mA W C C Caution Please handle this device at static-...
Description 3 W L-BAND POWER GaAs HJ-FET 3瓦L波段功率GaAs黄建忠场效应

File Size 95.74K  /  8 Page

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    SAB6456 SAB6456T

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. SAB6456 SAB6456T
OCR Text GHz divide-by-64/divide-by-256 switchable prescaler Product specification File under Integrated Circuits, IC02 June 1986 Philips Semicon...2 and 3 SYMBOL VCC ICC fi - 70 MIN. 4,5 TYP. 5,0 21 - - 1000 MAX. 5,5 V mA MHz UNIT June 1986 ...
Description Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler

File Size 77.51K  /  10 Page

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    ADF4116 ADF4116BCP ADF4116BRU ADF4117 ADF4117BCP ADF4117BRU ADF4118 ADF4118BCP ADF4118BRU

AD[Analog Devices]
Part No. ADF4116 ADF4116BCP ADF4116BRU ADF4117 ADF4117BCP ADF4117BRU ADF4118 ADF4118BCP ADF4118BRU
OCR Text GHz ADF4118: 3.0 GHz 2.7 V to 5.5 V Power Supply Separate V P Allows Extended Tuning Voltage in 3 V Systems Selected Charge Pump Currents Dual Modulus Prescaler ADF4116: 8/9 ADF4117/ADF4118: 32/33 3-Wire Serial Interface Digital Lock Detect...
Description RF PLL Frequency Synthesizers

File Size 224.20K  /  20 Page

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    BFQ67R BFQ67 BFQ67W

Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
Part No. BFQ67R BFQ67 BFQ67W
OCR Text ...small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Small feedback capacitance D Low noise figure D High transition frequency ...
Description Silicon NPN Planar RF Transistor(集电极电0mA,低噪声小信号放大器应用的NPN平面型晶体管)
MINILINK UK ;
From old datasheet system

File Size 184.90K  /  12 Page

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    BGA427 Q62702-G0067

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BGA427 Q62702-G0067
OCR Text ...* Gain |S21 |2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21 |2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA) * Noise figure NF = 2.2 dB at 1.8 GHz * typical device voltage VD = 2 V to 5 V * Reverse isolation < 35 dB (...
Description Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable)
From old datasheet system

File Size 34.05K  /  5 Page

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    CXG1030N

http://
SONY[Sony Corporation]
Part No. CXG1030N
OCR Text ...s VDD=3.0 V, VCTL=2.0 V, f=1.90 GHz Item 1 Current consumption 1 Gate voltage adjustment value Output power 2 Power gain 2 Adjacent channel leak power ratio (600 kHz 100 kHz) Symbol IDD VGG2 POUT GP ACPR600 Min. 0 21 36 Typ. 170 0.4 39 -59 ...
Description Power Amplifier for PHS

File Size 140.06K  /  5 Page

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