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For gate-igbt Found Datasheets File :: 12318 Search Time::1.469ms
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				Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text	.... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT and Diode at TJ = 125oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10, L = 500H, Test Circuit (Fig...
Description	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
File Size	170.23K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL
OCR Text	.... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT and Diode at TJ = 25oC ICE = 12A VCE = 390V VGE =15V RG = 10 L = 500H Test Circuit (Figure 20) ...
Description	600V SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBTs 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V/ SMPS Series N-Channel IGBTs 600 V, SMPS N-Channel IGBT
File Size	180.89K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text	.... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Fig...
Description	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
File Size	202.82K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text	.... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figu...
Description	From old datasheet system 27A, 600V, UFS Series N-Channel IGBTs 27A/ 600V/ UFS Series N-Channel IGBTs
File Size	111.87K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text	.... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous powe...
Description	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
File Size	151.95K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IHW40N65R5
OCR Text	...tedby t vjmax i fpuls 120.0 a gate-emitter voltage v ge 20 v powerdissipation t c =25c powerdissipation t c =100c p tot 230.0 115....igbt thermal resistance, junction - case r th(j-c) 0.65 k/w diode thermal resistance, junction - cas...
Description	high ruggedness and stable temperature behavior
File Size	2,113.72K / 15 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP12N60D1
OCR Text	GATE COLLECTOR (FLANGE) Features * 12A, 600V * Latch Free Operation * Typical Fall Time <500ns * High Input Impedance * Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best feature...
Description	12A/ 600V N-Channel IGBT 12A, 600V N-Channel IGBT
File Size	31.28K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IHW40N65R5-15
OCR Text	...tedby t vjmax i fpuls 120.0 a gate-emitter voltage v ge 20 v powerdissipation t c =25c powerdissipation t c =100c p tot 230.0 115....igbt thermal resistance, junction - case r th(j-c) 0.65 k/w diode thermal resistance, junction - cas...
Description	Reverse conducting IGBT with monolithic body diode
File Size	2,078.64K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IHW40N60R
OCR Text	...tedby t vjmax i fpuls 120.0 a gate-emitter voltage v ge 20 v powerdissipation t c =25c powerdissipation t c =100c p tot 305.0 152....igbt thermal resistance, junction - case r th(j-c) 0.49 k/w diode thermal resistance, junction - cas...
Description	Reverse conducting IGBT
File Size	2,019.82K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IHW40N60RF-15
OCR Text	...tedby t vjmax i fpuls 120.0 a gate-emitter voltage v ge 20 v powerdissipation t c =25c powerdissipation t c =100c p tot 305.0 152....igbt thermal resistance, junction - case r th(j-c) 0.49 k/w diode thermal resistance, junction - cas...
Description	Powerful monolithic body diode with low forward voltage designed for soft commutation only
File Size	1,989.07K / 15 Page	View it Online	Download Datasheet

For gate-igbt Found Datasheets File :: 12318 Search Time::1.469ms
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