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Tektronix, Inc.
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| Part No. |
2MI100F025
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| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 100a I(D) | module-Q 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 100号A（丁）|模块- Q
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| File Size |
174.50K /
4 Page |
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it Online |
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STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10HB1 GAL16V8AS-10HB3 GAL16V8AS-10HC1 GAL16V8AS-10HC3 GAL16V8AS-10QB1 GAL16V8AS-10QB3 GAL16V8AS-10QC1 GAL16V8AS-10QC3 GAL16V8AS-12EB1 GAL16V8AS-12EB3 GAL16V8AS-12EC1 GAL16V8AS-12EC3 GAL16V8AS-12HB1 GAL16V8AS-12HB3 GAL16V8AS-12HC1 GAL16V8AS-12HC3 GAL16V8AS-12QB1 GAL16V8AS-12QB3 GAL16V8AS-12QC1 GAL16V8AS-12QC3 GAL16V8AS-15EB1 GAL16V8AS-15EB3 GAL16V8AS-15EC1 GAL16V8AS-15EC3 GAL16V8AS-15HB1 GAL16V8AS-15HB3 GAL16V8AS-15HC1 GAL16V8AS-15HC3 GAL16V8AS-15QB1 GAL16V8AS-15QB3 GAL16V8AS-15QC1 GAL16V8AS-15QC3 GAL16V8AS-20EB1 GAL16V8AS-20EB3 GAL16V8AS-20EC1 GAL16V8AS-20EC3 GAL16V8AS-20HB1 GAL16V8AS-20HB3 GAL16V8AS-20HC1 GAL16V8AS-20HC3 GAL16V8AS-20QB1 GAL16V8AS-20QB3 GAL16V8AS-20QC1 -GAL16V8AS-20HB3 -GAL16V8AS-20EC1 -GAL16V8AS-20EC3 -GAL16V8AS-10QC3
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| Description |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT module, TRENCH, 600v, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600v; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT module, 6 PACK 600vIGBT module, 6 PACK 600v; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600v; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
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| File Size |
736.53K /
14 Page |
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it Online |
Download Datasheet |
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Toshiba, Corp.
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| Part No. |
CM100DY24H
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| Description |
TRANSISTOR | IGBT POWER module | HALF BRIDGE | 1.2KV V(BR)CES | 100a I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
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| File Size |
218.65K /
4 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
2MBI100J120
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| Description |
TRANSISTOR | IGBT POWER module | HALF BRIDGE | 1.2KV V(BR)CES | 100a I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一c
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| File Size |
176.91K /
4 Page |
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Analog Devices, Inc.
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| Part No. |
EVK75-050 2DI75S050A
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| Description |
TRANSISTOR | BJT POWER module | HALF BRIDGE | DARLINGTON | 600v V(BR)CEO | 75A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT POWER module | HALF BRIDGE | DARLINGTON | 600v V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600v的五（巴西）总裁| 75
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| File Size |
51.39K /
1 Page |
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it Online |
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Price and Availability
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