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Ruichips Semiconductor ...
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| Part No. |
RU1H36L
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| OCR Text |
...25 c unless otherwise noted) v dss drain - source voltage 100 v v gs s gate - source voltage 2 0 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 32 a moun... |
| Description |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
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| File Size |
281.91K /
9 Page |
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it Online |
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Ruichips Semiconductor ...
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| Part No. |
RU1H35K
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| OCR Text |
dss 100 v gss 25 t j 175 c t stg -55 to 175 c i s t c =25c 40 a i dp t c =25c 160 a t c =25c 40 t c =100c 30 t c =25c 97 t c =100c 48 r jc 1.55 c/w r ja 100 c/w e as 90 mj ruichips semiconductor co., ltd rev. a? apr., 2013 1 www.ruichi... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
268.66K /
8 Page |
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it Online |
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Advanced Power Electronics
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| Part No. |
09N70P AP09N70P
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| OCR Text |
... dynamic dv/dt rating bv dss 600/675v repetitive avalanche rated r ds(on) 0.75 fast switching i d 9a simple drive requirement description absolute maximum ratings symbol units v ds ... |
| Description |
Search --To AP09N70P
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
112.51K /
6 Page |
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it Online |
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Ruichips Semiconductor ...
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| Part No. |
RU1H300Q
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| OCR Text |
dss 100 v gss 25 t j 175 c t stg -55 to 175 c i s t c =25c 300 a i dp t c =25c 1200 a t c =25c 300 t c =100c 210 t c =25c 600 t c =100c 300 r jc 0.25 c/w r ja 50 c/w e as 2450 mj ruichips semiconductor co., ltd rev. a? may., 2013 1 www... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
278.22K /
8 Page |
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it Online |
Download Datasheet |
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